2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
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Published By IEEE

9781457711213, 9781457711190, 9781457711206

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Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174946 ◽

2012 ◽

Author(s):

M. Reza Ghajar ◽

Seth J. Wilk ◽

William Lepkowski ◽

Bertan Bakkaloglu ◽

Trevor J. Thornton

Keyword(s):

Power Amplifier ◽

Rf Power ◽

Class Ab ◽

Rf Power Amplifier ◽

Cmos Compatible

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About CP

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174936 ◽

2012 ◽

Download Full-text

35 W bi-level supply modulated Doherty amplifier for 3G LTE base station

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174927 ◽

2012 ◽

Author(s):

Joon Hyung Kim ◽

Jae Ho Jung ◽

Chul Soon Park

Keyword(s):

Base Station ◽

Doherty Amplifier

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[Front cover]

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174918 ◽

2012 ◽

Keyword(s):

Front Cover

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High efficiency wideband envelope tracking power amplifier with direct current sensing for LTE applications

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174933 ◽

2012 ◽

Cited By ~ 9

Author(s):

Myoungbo Kwak ◽

Jinseong Jeong ◽

Muhammad Hassan ◽

Jomei J. Yan ◽

Donald F. Kimball ◽

...

Keyword(s):

Power Amplifier ◽

Direct Current ◽

High Efficiency ◽

Envelope Tracking ◽

Current Sensing

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Behavioral modeling of Si LDMOS pre-matched devices with application to Doherty power amplifiers

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174935 ◽

2012 ◽

Author(s):

Joseph Staudinger ◽

Paul Hart ◽

Damon Holmes

Keyword(s):

Power Amplifiers ◽

Behavioral Modeling

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Equivalent circuit GaN HEMT model accounting for gate-lag and drain-lag transient effects

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174940 ◽

2012 ◽

Cited By ~ 5

Author(s):

Justin B. King ◽

Thomas J. Brazil

Keyword(s):

Equivalent Circuit ◽

Transient Effects ◽

Gan Hemt ◽

Drain Lag

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Brief author index

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174923 ◽

2012 ◽

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Frequently asked questions

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174937 ◽

2012 ◽

Download Full-text

Linearity considerations for a high power Doherty amplifier

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174912 ◽

2012 ◽

Cited By ~ 2

Author(s):

M. Masood ◽

J. Staudinger ◽

J. Wood ◽

M. Bokatius ◽

J. S. Kenney

Keyword(s):

High Power ◽

Doherty Amplifier

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2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology

About CP

35 W bi-level supply modulated Doherty amplifier for 3G LTE base station

[Front cover]

High efficiency wideband envelope tracking power amplifier with direct current sensing for LTE applications

Behavioral modeling of Si LDMOS pre-matched devices with application to Doherty power amplifiers

Equivalent circuit GaN HEMT model accounting for gate-lag and drain-lag transient effects

Brief author index

Frequently asked questions

Linearity considerations for a high power Doherty amplifier

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications
Latest Publications