PR_26 Coupled Microring Resonators: Towards Overcoming Disorder Effects

Extended abstract of an invited presentation at the CMOS Emerging Technologies Conference. Long CROWs are experimentally realized which consist of hundreds of coupled silicon microring racetrack resonators fabricated using CMOS-compatible fabrication on silicon-on-insulator (SOI) wafers.

Photonic Nanojet Generation Using Integrated Silicon Photonic Chip with Hemispherical Structures

Photonic nanojet (PNJ) is a tightly focused diffractionless travelling beam generated by dielectric microparticles. The location of the PNJ depends on the refractive index of the material and it usually recedes to the interior of the microparticle when the refractive index is higher than 2, making high index materials unsuitable to produce useful PNJs while high index favours narrower PNJs. Here we demonstrate a design of CMOS compatible high index on-chip photonic nanojet based on silicon. The proposed design consists of a silicon hemisphere on a silicon substrate. The PNJs generated can be tuned by changing the radius and sphericity of the hemisphere. Oblate spheroids generate PNJs further away from the refracting surface and the PNJ length exceeds 17𝜆 when the sphericity of the spheroid is 2.25 The proposed device can have potential applications in focal plane arrays, enhanced Raman spectroscopy, and optofluidic chips.

Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes

A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V.