2010 Conference on Optoelectronic and Microelectronic Materials and Devices
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121

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3

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9781424473342

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Experimental and theoretical study of thermal effects on the dynamical hysteresis in VCSEL turn-on and turn -off

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699777 ◽

2010 ◽

Author(s):

Y. H. Hong ◽

C. Masoller ◽

M. S. Torre ◽

S. Priyadarshi ◽

A. A. Qader ◽

...

Keyword(s):

Thermal Effects ◽

Theoretical Study ◽

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Accurate determination of electronic transport parameters in multi-carrier and multi-layer HgCdTe structures

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699690 ◽

2010 ◽

Author(s):

G. A. Umana-Membreno ◽

J. Antoszewski ◽

E.P.G. Smith ◽

G.M. Venzor ◽

V. Phillips ◽

...

Keyword(s):

Electronic Transport ◽

Accurate Determination ◽

Transport Parameters

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Oxidation of AlInAs for current blocking in a photonic crystal laser

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699799 ◽

2010 ◽

Author(s):

R. Zhang ◽

J.J.G.M. van der Tol ◽

H. Ambrosius ◽

P. Thijs ◽

B. Smalbrugge ◽

...

Keyword(s):

Photonic Crystal ◽

Crystal Laser ◽

Photonic Crystal Laser ◽

Current Blocking

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Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699774 ◽

2010 ◽

Author(s):

Y.N. Guo ◽

J. Zou ◽

H.J. Joyce ◽

Q. Gao ◽

H.H. Tan ◽

...

Keyword(s):

High Temperature ◽

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Strain relaxation in germanium-on-insulator fabricated by a modified germanium condensation

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699714 ◽

2010 ◽

Author(s):

D. Choi ◽

B. Luther-Davies ◽

T. Kim ◽

K. Belay ◽

D. Llewellyn ◽

...

Keyword(s):

Strain Relaxation

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Design of GaN-based light-emitting diodes with enhanced lateral light extraction

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699780 ◽

2010 ◽

Author(s):

Hyunsoo Kim ◽

Seongjun Kim ◽

Youngjun Park

Keyword(s):

Light Emitting Diodes ◽

Light Extraction ◽

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Nuclear magnetic resonance in GaAs-AlGaAs nanostructure devices

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699720 ◽

2010 ◽

Author(s):

Z.K. Keane ◽

M.C. Godfrey ◽

S. Fricke ◽

A.M. Burke ◽

A.P. Micolich ◽

...

Keyword(s):

Nuclear Magnetic Resonance ◽

Magnetic Resonance ◽

Nuclear Magnetic

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Junction temperature measurement on the light-emitting diodes lamp for space applications

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699697 ◽

2010 ◽

Author(s):

W. Lu ◽

T. Zhang ◽

S.M. He ◽

B. Zhang ◽

N. Li ◽

...

Keyword(s):

Temperature Measurement ◽

Light Emitting Diodes ◽

Junction Temperature ◽

Space Applications ◽

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Decoration of nitrogen vacancies by oxygen atoms in boron nitride nanotubes

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699748 ◽

2010 ◽

Author(s):

Mladen Petravic ◽

Robert Peter ◽

Ivna Kavre ◽

Lu Hua Li ◽

Ying Chen ◽

...

Keyword(s):

Boron Nitride ◽

Boron Nitride Nanotubes ◽

Nitrogen Vacancies ◽

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Can insulating the gates lead us to stable modulation-doped hole quantum devices?

2010 Conference on Optoelectronic and Microelectronic Materials and Devices ◽

10.1109/commad.2010.5699738 ◽

2010 ◽

Author(s):

D. Waddington ◽

A.M. Burke ◽

S. Fricke ◽

H.H. Tan ◽

C. Jagadish ◽

...

Keyword(s):

Quantum Devices

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