2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602)
Latest Publications

TOTAL DOCUMENTS

17

(FIVE YEARS 0)

H-INDEX

4

(FIVE YEARS 0)

Published By IEEE

0790800667

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Comparison of silicon carbide and GaAs Schottky diode

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995725 ◽

2002 ◽

Author(s):

J. Luo ◽

K. Chung ◽

H. Huang ◽

J.B. Bernstein

Keyword(s):

Silicon Carbide ◽

Download Full-text

Comparative thermal characterizations of GaAs and SiC devices

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995723 ◽

2002 ◽

Author(s):

J.A. Mittereder ◽

W.T. Anderson ◽

F.A. Buot ◽

D.E. Ioannou

Download Full-text

Channel-substrate current and breakdown characteristics in GaAs MESFETs with varied MBE buffer thickness

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995737 ◽

2002 ◽

Author(s):

F. Gao ◽

R. Chanana ◽

T. Nicholls

Keyword(s):

Substrate Current

Download Full-text

Reliability issues in GaAs-based devices for space applications

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995727 ◽

2002 ◽

Author(s):

R. Leon ◽

J. Okuno ◽

R. Ruiz ◽

M. Gallegos ◽

D.T. Vu

Keyword(s):

Space Applications

Download Full-text

Getting to zero - methods of reducing defects

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995730 ◽

2002 ◽

Author(s):

W.J. Roesch

Download Full-text

Exploring physical mechanisms for sudden beta degradation in GaAs-based HBTs

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995741 ◽

2002 ◽

Author(s):

R.E. Welser ◽

P.M. DeLuca

Keyword(s):

Physical Mechanisms

Download Full-text

Determination of reliability on MOCVD grown InGaP/GaAs HBT's under both thermal and current acceleration stresses

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995743 ◽

2002 ◽

Author(s):

K.T. Feng ◽

L. Rushing ◽

P. Canfield ◽

L. Flores

Download Full-text

Reliability of metamorphic HEMTs on GaAs substrates

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995739 ◽

2002 ◽

Author(s):

P.F. Marsh ◽

C.S. Whelan ◽

W.E. Hoke ◽

R.E. Leoni ◽

T.E. Kazior

Keyword(s):

Gaas Substrates

Download Full-text

Effect of gate metal on reliability of metamorphic HEMTs

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995734 ◽

2002 ◽

Author(s):

M. Dammann ◽

A. Leuther ◽

H. Konstanzer ◽

W. Jantz

Download Full-text

Reliable AlGaAs/GaAs HBTs grown by MBE with increased beryllium doping and aluminum concentration

2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602) ◽

10.1109/gaasrw.2001.995748 ◽

2002 ◽

Author(s):

M. Fresina ◽

M. Logue ◽

J. Fendrich ◽

T. Rogers

Keyword(s):

Aluminum Concentration ◽

Beryllium Doping

Download Full-text