The Physics of SiO2 and its Interfaces
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9780080230498

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SPECTROSCOPIC AND STRUCTURAL PROPERTIES OF NITROGEN DOPED LOW-TEMPERATURE SiO2 FILMS

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50039-7 ◽

1978 ◽

pp. 200-204 ◽

Author(s):

Gordon Wood Anderson ◽

William A. Schmidt ◽

James Comas

Keyword(s):

Low Temperature ◽

Structural Properties ◽

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THE Si-SiO2 INTERFACE: OXIDE CHARGE, ELECTRON AFFINITY AND FAST SURFACE STATES

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50081-6 ◽

1978 ◽

pp. 438-442

Author(s):

L.A. Kasprzak ◽

A.K. Gaind

Keyword(s):

Electron Affinity ◽

Surface States ◽

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MEASUREMENT OF HYDROGEN PROFILES IN SiO2 BY A NUCLEAR REACTION TECHNIQUE

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50041-5 ◽

1978 ◽

pp. 210-214 ◽

Author(s):

D.D. Allred ◽

C.W. White ◽

G.J. Clark ◽

B.R. Appleton ◽

I.S.T. Tsong

Keyword(s):

Nuclear Reaction

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HIGH-ELECTRIC FIELD TRANSPORT OF ELECTRONS IN SiO2

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50009-9 ◽

1978 ◽

pp. 29-34 ◽

Author(s):

D.K. Ferry

Keyword(s):

Electric Field ◽

High Electric Field

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TRANSMISSION ELECTRON MICROSCOPY OF MICRO-STRUCTURAL DEFECTS IN Si-SiO2 SYSTEMS – Si CLUSTERS IN SiO2 FILM –

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50065-8 ◽

1978 ◽

pp. 351-355 ◽

Author(s):

Jen-Jon Chen ◽

Takuo Sugano

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Sio2 Film ◽

Structural Defects ◽

Transmission Electron

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CATHODOLUMINESCENCE STUDIES OF SiO2- Na,Cl,Ge,Cu,Au AND OXYGEN VACANCY RESULTS

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50053-1 ◽

1978 ◽

pp. 289-293 ◽

Author(s):

Colin E. Jones ◽

David Embree

Keyword(s):

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THE NATURE OF ELECTRON TUNNELING IN SiO2

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50012-9 ◽

1978 ◽

pp. 46-50

Author(s):

M. Av-Ron ◽

M. Shatzkes ◽

T.H. DiStefano ◽

I.B. Cadoff

Keyword(s):

Electron Tunneling

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TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACE

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50078-6 ◽

1978 ◽

pp. 421-427 ◽

Author(s):

N.M. Johnson ◽

D.J. Bartelink ◽

M. Schulz

Keyword(s):

Electronic States ◽

Capacitance Measurements ◽

Transient Capacitance

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STUDIES OF Si/SiO2 INTERFACES AND SiO2 BY XPS

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50070-1 ◽

1978 ◽

pp. 379-383 ◽

Author(s):

Takeo Hattori ◽

Tatsushi Nishina

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INTRINSIC SURFACE PHONONS IN POROUS GLASS

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50057-9 ◽

1978 ◽

pp. 309-313

Author(s):

C.A. Murray ◽

T.J. Greytak

Keyword(s):

Porous Glass ◽

Surface Phonons

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