1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)
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Wafer level reliability (WLR) special interest group (SIG)

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830586 ◽

2005 ◽

Author(s):

A. Martin

Keyword(s):

Interest Group ◽

Special Interest ◽

Special Interest Group ◽

Wafer Level

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Burn-in

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830574 ◽

2005 ◽

Author(s):

R. Vollertsen ◽

R. Hijab

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Thin oxide limits

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830575 ◽

2005 ◽

Author(s):

E. Vincent ◽

J.S. Suehle

Keyword(s):

Thin Oxide

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Hot-carriers

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830577 ◽

2005 ◽

Cited By ~ 1

Author(s):

A. Bravaix

Keyword(s):

Hot Carriers

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Electromigration

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830576 ◽

2005 ◽

Cited By ~ 1

Author(s):

T. Sullivan ◽

H. Schafft

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WLR discussion group summary

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830573 ◽

2005 ◽

Author(s):

C. Graas ◽

E. Achee

Keyword(s):

Discussion Group

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Predicting thermal behavior of interconnects

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830558 ◽

2003 ◽

Cited By ~ 11

Author(s):

J. Gill ◽

D. Harmon ◽

J. Furukawa ◽

T. Sullivan

Keyword(s):

Thermal Behavior

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Signal margin test to identify process sensitivities relevant to DRAM reliability and functionality at low temperatures

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830551 ◽

2003 ◽

Cited By ~ 2

Author(s):

E. Nelson ◽

Y. Li ◽

D. Poindexter ◽

M. Ruprecht ◽

E. Lim ◽

...

Keyword(s):

Low Temperatures

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Temperature dependence of resistance in Black's equation and in calibration for SWEAT and NIST structures: the parameter T/sub EO/

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830579 ◽

2003 ◽

Author(s):

C.R. Crowell ◽

Chih-Ching Shih ◽

K. Jonggook ◽

V.C. Tyree

Keyword(s):

Temperature Dependence

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Reliability aspects of stress-induced voiding in 0.25 μm metallization

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) ◽

10.1109/irws.1999.830552 ◽

2003 ◽

Author(s):

A. Zitzelsberger ◽

M. Lehr

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1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Wafer level reliability (WLR) special interest group (SIG)

Burn-in

Thin oxide limits

Hot-carriers

Electromigration

WLR discussion group summary

Predicting thermal behavior of interconnects

Signal margin test to identify process sensitivities relevant to DRAM reliability and functionality at low temperatures

Temperature dependence of resistance in Black's equation and in calibration for SWEAT and NIST structures: the parameter T/sub EO/

Reliability aspects of stress-induced voiding in 0.25 μm metallization

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460)
Latest Publications