Simultaneous Enhancement of Open-Circuit Voltage, Short-Circuit Current Density, and Fill Factor in Polymer Solar Cells

2011 ◽  
Vol 23 (40) ◽  
pp. 4636-4643 ◽  
Author(s):  
Zhicai He ◽  
Chengmei Zhong ◽  
Xun Huang ◽  
Wai-Yeung Wong ◽  
Hongbin Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

An efficient method to achieve a balanced open circuit voltage and short circuit current density in polymer solar cells

2016 ◽  
Vol 4 (21) ◽  
pp. 8291-8297 ◽  
Author(s):  
Dongfeng Dang ◽  
Pei Zhou ◽  
Linrui Duan ◽  
Xichang Bao ◽  
Renqiang Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Efficient Method ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Energy Levels ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

Good light harvesting properties and matched energy levels as well as enhanced Jsc value and high Voc value in solar cells were achieved simultaneously by construction of the D–A–π–A type regular terpolymers of PIDT-DTQ-TT, finally leading to the maximum PCE value of 6.63% in PSCs.

Demonstration of a 4H SiC Betavoltaic Cell

2006 ◽  
Vol 527-529 ◽  
pp. 1351-1354 ◽  
Author(s):  
M.V.S. Chandrashekhar ◽  
Christopher I. Thomas ◽  
Hui Li ◽  
Michael G. Spencer ◽  
Amit Lal
Keyword(s):  
Current Density ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Type Model ◽  
Good Correspondence ◽  
Betavoltaic Cell

A betavoltaic cell in 4H SiC is demonstrated. An abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single p-n junction. An efficiency of 3.7% was obtained. A simple photovoltaic type model was used to explain the results. Good correspondence with the model was obtained. Fill factor and backscattering effects were included. Efficiency was limited by edge recombination and poor fill factor.

Simultaneous Improvement in Short Circuit Current, Open Circuit Voltage, and Fill Factor of Polymer Solar Cells through Ternary Strategy

2015 ◽  
Vol 7 (6) ◽  
pp. 3691-3698 ◽  
Author(s):  
Qiaoshi An ◽  
Fujun Zhang ◽  
Lingliang Li ◽  
Jian Wang ◽  
Qianqian Sun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit

Approach to tune short-circuit current and open-circuit voltage of dye-sensitized solar cells: π-linker modification and photoanode selection

RSC Advances ◽  
2014 ◽  
Vol 4 (80) ◽  
pp. 42252-42259 ◽  
Author(s):  
Shengbo Zhu ◽  
Zhongwei An ◽  
Xinbing Chen ◽  
Pei Chen ◽  
Qianfeng Liu
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

The modification of the π-linker of cyclic thiourea functionalized dyes has a significant effect on the short-circuit current density and open-circuit voltage of dye-sensitized solar cells.

Solar Cells from Mixed SiCi2H2 and SiH4 Plasmas

1997 ◽  
Vol 467 ◽  
Author(s):  
A. M. Payne ◽  
B. K. Crone ◽  
S. Wagner
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Boron Doped ◽  
Phosphorus Doped ◽  
Defect Densities

ABSTRACTWe have deposited and analyzed solar cells from mixed SiCI2H2/SiH4 plasmas. Intrinsic and doped films were also grown to explain the cell results. The SiCI2H2 cells have lower fill factor and short circuit current density than the SiH4 cells due to the higher defect densities and lower photoconductivities of SiCI2H2/SiH4 material. Cell results showed low VQC if the n-layer was in contact with an i-layer deposited from SiCI2H2/SiH4. A pure silane buffer layer between the i- and n-layers was needed to attain the standard open circuit voltage. The reduced Voc results from a reduced conductivity of phosphorus-doped SiCI2H2/SiH4 material. However, comparison of doped films showed higher conductivities for boron-doped material grown from the SiCI2H2/SiH4 mixture than from pure silane.

A naphthodithieno[3,2-b]thiophene-based copolymer as a novel third component in ternary polymer solar cells with a simultaneously enhanced open circuit voltage, short circuit current and fill factor

2018 ◽  
Vol 42 (7) ◽  
pp. 5314-5322
Author(s):  
Yuqian Sun ◽  
Biao Guo ◽  
Youchun Chen ◽  
Weifeng Zhang ◽  
Xiang Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Ternary Polymer

Ternary polymer solar cells with simultaneously improved VOC, JSC and FF have been achieved by doping PV12 as a third component.

Porous Silicon Antireflection Coating for Solar Cells Using Chemical Etching in HF-FeCl3-H2O

2016 ◽  
Vol 22 ◽  
pp. 1-6 ◽  
Author(s):  
Rachid Chaoui ◽  
Bedra Mahmoudi ◽  
Yasmine Si Ahmed
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Relative Improvement ◽  
Cell Conversion

Stain etching of silicon solar cells in HF-FeCl3-H2O solutions as a last step in the processing sequence is reported. The etching was carried out without protecting the screen printed contacts. Following optimization of the solution composition and using very short etching times to alleviate the contact degradation problem, the solar cell weighted reflectance (Rw) between 400 and 1100 nm could be reduced from 38.23% to 11.54%. For the best small area cell (~20 cm2), the PS antireflective layer led to a relative improvement of 62.74% in the short-circuit current density, the FF was enhanced by 5.5% absolute, the open-circuit voltage was increased by 1.2 mV and the cell conversion efficiency was raised by 4.1% absolute from 5.4% to 9.5%. The best large area cell (~78 cm2) shows the following changes after porous layer formation: a relative improvement of 45.43% in the short-circuit current density, an improvement in the FF of 7.4% absolute, an increase in the open-circuit voltage by 7.5 mV and an enhancement in the cell efficiency by 4.0% absolute from 6.2% to 10.2%. This method shows a great potential for the cost-effective reduction of reflectance losses in industrial silicon solar cell manufacturing.

Sign in / Sign up

Export Citation Format

Share Document