Supported Vanadium Oxide Clusters in Partial Oxidation Processes: Catalytic Consequences of Size and Electronic Structure

ChemCatChem ◽  
2017 ◽  
Vol 9 (19) ◽  
pp. 3655-3669 ◽  
Author(s):  
Dongmin Yun ◽  
Yang Song ◽  
José E. Herrera
Keyword(s):  
Electronic Structure ◽  
Vanadium Oxide ◽  
Partial Oxidation ◽  
Oxidation Processes ◽  
Vanadium Oxide Clusters

Electronic Structure of Vanadium Oxide Clusters in Layered Perovskite Compounds Srn+1VnO3n+1(n=1, 2, 3)

1992 ◽  
Vol 61 (7) ◽  
pp. 2399-2411 ◽  
Author(s):  
Shigenori Tanaka ◽  
Noburu Fukushima ◽  
Reiko Yoshimura ◽  
Tsukasa Tada
Keyword(s):  
Electronic Structure ◽  
Vanadium Oxide ◽  
Layered Perovskite ◽  
Vanadium Oxide Clusters

Ligand-Coated Vanadium Oxide Clusters: Capturing Gas-Phase Magic Numbers in Solution

2011 ◽  
Vol 115 (14) ◽  
pp. 6438-6447 ◽  
Author(s):  
S. Ard ◽  
C. J. Dibble ◽  
S. T. Akin ◽  
M. A. Duncan
Keyword(s):  
Vanadium Oxide ◽  
Gas Phase ◽  
Magic Numbers ◽  
Vanadium Oxide Clusters

Methane Activation on (Au/Ag)1-Doped Vanadium Oxide Clusters

2019 ◽  
Vol 35 (9) ◽  
pp. 1005-1013 ◽  
Author(s):  
Dan WANG ◽  
◽  
Xunlei DING ◽  
Henglu LIAO ◽  
Jiayu DAI ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Methane Activation ◽  
Vanadium Oxide Clusters

Partial oxidation of propene over U.V.-irradiated vanadium oxide supported on silica

1981 ◽  
pp. 601 ◽  
Author(s):  
Satohiro Yoshida ◽  
Yasuhiro Magatani ◽  
Shigeyoshi Noda ◽  
Takuzo Funabiki
Keyword(s):  
Vanadium Oxide ◽  
Partial Oxidation

Properties of Electrical Conductivity of Amorphous Tungsten-Doped Vanadium Oxide for Uncooled Microbolometers

2007 ◽  
Vol 124-126 ◽  
pp. 343-346 ◽  
Author(s):  
Yong Hee Han ◽  
Seung Hoon Lee ◽  
Kun Tae Kim ◽  
In Hoon Choi ◽  
Sung Moon
Keyword(s):  
Electrical Conductivity ◽  
Electronic Structure ◽  
Electrical Properties ◽  
Vanadium Oxide ◽  
Tungsten Oxide ◽  
Uncooled Microbolometer ◽  
Thermometric Material ◽  
Very High ◽  
And Tungsten

In recent years, we have reported uncooled microbolometer with amorphous vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this changes of electronic structure attribute to electrical properties such as high TCR values of vanadium-tungsten oxide.

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