Hydrogen storage kinetics and thermodynamics of Mg‐based alloys by rare earth doping and Ni substitution

2021 ◽  
Author(s):  
Wengang Bu ◽  
Wenlian Peng ◽  
Qinghai Liu ◽  
Xiaodong Dai
Keyword(s):  
Rare Earth ◽  
Hydrogen Storage ◽  
Rare Earth Doping ◽  
Kinetics And Thermodynamics ◽  
Hydrogen Storage Kinetics ◽  
Ni Substitution

Characterization of microstructure, hydrogen storage kinetics and thermodynamics of a melt-spun Mg86Y10Ni4 alloy

2019 ◽  
Vol 44 (13) ◽  
pp. 6728-6737 ◽  
Author(s):  
Tai Yang ◽  
Peng Wang ◽  
Chaoqun Xia ◽  
Qiang Li ◽  
Chunyong Liang ◽  
...  
Keyword(s):  
Hydrogen Storage ◽  
Kinetics And Thermodynamics ◽  
Hydrogen Storage Kinetics ◽  
Melt Spun

Improved hydrogen storage kinetics and thermodynamics of RE-Mg-based alloy by co-doping Ce–Y

2019 ◽  
Vol 44 (31) ◽  
pp. 16765-16776 ◽  
Author(s):  
Hui Yong ◽  
Shihai Guo ◽  
Zeming Yuan ◽  
Yan Qi ◽  
Dongliang Zhao ◽  
...  
Keyword(s):  
Hydrogen Storage ◽  
Kinetics And Thermodynamics ◽  
Hydrogen Storage Kinetics ◽  
Co Doping

Structure, hydrogen storage kinetics and thermodynamics of Mg-base Sm5Mg41 alloy

2016 ◽  
Vol 41 (14) ◽  
pp. 5994-6003 ◽  
Author(s):  
Zeming Yuan ◽  
Tai Yang ◽  
Wengang Bu ◽  
Hongwei Shang ◽  
Yan Qi ◽  
...  
Keyword(s):  
Hydrogen Storage ◽  
Kinetics And Thermodynamics ◽  
Hydrogen Storage Kinetics

Ultrathin K2Ti8O17 nanobelts for improving the hydrogen storage kinetics of MgH2

2021 ◽  
pp. 160571
Author(s):  
Hu Song ◽  
Huanhuan Zhang ◽  
Zhenluo Yuan ◽  
Yuhang Wang ◽  
Guangxin Fan ◽  
...  
Keyword(s):  
Hydrogen Storage ◽  
Hydrogen Storage Kinetics ◽  
Kinetics Of

Erbium Tris(Amide) Compounds as Source Molecules FOR Rare Earth Doping of Semiconducting Materials

1995 ◽  
Vol 415 ◽  
Author(s):  
Oliver Just ◽  
Anton C. Greenwald ◽  
William S. Rees
Keyword(s):  
Rare Earth ◽  
Solid State ◽  
Earth Element ◽  
Optoelectronic Devices ◽  
Analytical Techniques ◽  
Optically Active ◽  
Rare Earth Doping ◽  
Semiconducting Materials ◽  
Host Materials ◽  
Erbium Doped

ABSTRACTThe homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.

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