scholarly journals Strategy to mitigate the dipole interfacial states in (i)a‐Si:H/MoO x passivating contacts solar cells

Author(s):  
Luana Mazzarella ◽  
Alba Alcañiz ◽  
Paul Procel ◽  
Eliora Kawa ◽  
Yifeng Zhao ◽  
...  
1997 ◽  
Vol 485 ◽  
Author(s):  
K. Li ◽  
Z. C. Feng ◽  
A. T. S. Wee ◽  
H. C. Chou ◽  
J. Y. Lin ◽  
...  

AbstractSeveral efficiency influencing factors in MOCVD-grown CdTe/CdS solar cells, including preferential crystal orientation of CdTe layers, CdTe grain size and surface roughness, interfacial mixing, and surface and interface geometrical morphology, are studied. X-ray diffraction (XRD) shows that polycrystalline CdTe/CdS solar cells with higher efficiencies tend to have more (111) planes of CdTe parallel to the macro-surface. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analysis reveal the relationship between the grain size/surface roughness and cell efficiency. Secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profiling show that the interfacial geometrical morphology has a significant influence on the efficiency of CdTe/CdS solar cells. Finally it is shown that interfacial mixing reduces the number of interfacial states and recombination centers and the energy loss due to internal reflectance, enhancing the performance of the solar cells.


A model of Schottky barrier solar cells with an interfacial layer is described which takes into account more accurately than has been done so far the dependence of barrier height on the interfacial density of states (D s ) and consequently the various potential drops in the cell. The improvement tends to yield higher predicted efficiencies for low values of D s . Also taken into account is the recombination traffic through the interfacial states. This effect is important at high values of D s when it lowers the predicted efficiency. Recombination in the transition and bulk regions is also considered, but this does not have a very marked effect. Numerical results are given for a Au-Si0 2 -Si contact. A new effect - the possible fanning out of the quasi-Fermi levels for the interfacial states - is also noted.


Author(s):  
Luana Mazzarella ◽  
Alba Alcaniz-Moya ◽  
Eliora Kawa ◽  
Paul Procel ◽  
Yifeng Zhao ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.


2011 ◽  
pp. 011111165738
Author(s):  
Marc Reisch
Keyword(s):  

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