Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry (OICT) imaging

We have developed optical-interference contactless thermometry (OICT) imaging technique to visualize three-dimensional transient temperature distribution in 4H-SiC Schottky barrier diode (SBD) under operation. When a 1 ms forward pulse bias was applied, clear variation of optical interference fringes induced by self-heating and cooling were observed. Thermal diffusion and optical analysis revealed three-dimensional temperature distribution with high spatial (≤ 10 μm) and temporal (≤ 100 μs) resolutions. A hot spot that signals breakdown of the SBD was successfully captured as an anormal interference, which indicated a local heating to a temperature as high as 805 K at the time of failure.

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

Photosensitive Schottky Barrier Diode Based on Cu/p-SnSe Thin Film Fabricated by Thermal Evaporation

Tin Selenide (SnSe), a group IV-VI compound semiconductor material is used to fabricate various solid state devices such as memory switching devices, P-N junction diodes, Schottky barrier diodes, etc. In...