schottky barrier
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Nano Today ◽  
2022 ◽  
Vol 42 ◽  
pp. 101372
Shengyao Chen ◽  
Shu Wang ◽  
Cong Wang ◽  
Zhongchang Wang ◽  
Qian Liu

Keiya Fujimoto ◽  
Hiroaki Hanafusa ◽  
Takuma Sato ◽  
Seiichiro HIGASHI

Abstract We have developed optical-interference contactless thermometry (OICT) imaging technique to visualize three-dimensional transient temperature distribution in 4H-SiC Schottky barrier diode (SBD) under operation. When a 1 ms forward pulse bias was applied, clear variation of optical interference fringes induced by self-heating and cooling were observed. Thermal diffusion and optical analysis revealed three-dimensional temperature distribution with high spatial (≤ 10 μm) and temporal (≤ 100 μs) resolutions. A hot spot that signals breakdown of the SBD was successfully captured as an anormal interference, which indicated a local heating to a temperature as high as 805 K at the time of failure.

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

2022 ◽  
Hirenkumar Shantilal Jagani ◽  
Shubham Umeshkumar Gupta ◽  
Karan Bhoraniya ◽  
Mayuri Navapariya ◽  
V. M. Pathak ◽  

Tin Selenide (SnSe), a group IV-VI compound semiconductor material is used to fabricate various solid state devices such as memory switching devices, P-N junction diodes, Schottky barrier diodes, etc. In...

2022 ◽  
Vol 71 (1) ◽  
pp. 017104-017104
Hao Guo-Qiang ◽  
Zhang Rui ◽  
Zhang Wen-Jing ◽  
Chen Na ◽  

2022 ◽  
Vol 64 (1) ◽  
pp. 74
И.Г. Стамов ◽  
Д.В. Ткаченко

The effect of the electric field on hydrogen-like states in β-ZnP2 is investigated. It was found that the exciton states Cn=1 in the electric field of the Schottky barrier undergo an anomalous Stark shift, and the states that form a reverse hydrogen-like series of absorption lines (IOS) are practically insensitive to the electric field. The laws governing the behavior of the exciton Xn=2 state "flammable" in an electric field in β-ZnP2 have been determined.

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