Ab initio analysis of a vacancy and a self-interstitial near single crystal silicon surfaces: Implications for intrinsic point defect incorporation during crystal growth from a melt

2012 ◽  
Vol 209 (10) ◽  
pp. 1880-1883 ◽  
Author(s):  
Eiji Kamiyama ◽  
Koji Sueoka ◽  
Jan Vanhellemont
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Ab Initio ◽  
Point Defect ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Intrinsic Point Defect ◽  
Crystal Silicon

Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon

2014 ◽  
Vol 251 (11) ◽  
pp. 2159-2168 ◽  
Author(s):  
Koji Sueoka ◽  
Eiji Kamiyama ◽  
Jan Vanhellemont ◽  
Kozo Nakamura
Keyword(s):  
Single Crystal ◽  
Point Defect ◽  
Single Crystal Silicon ◽  
Intrinsic Point Defect ◽  
Crystal Silicon ◽  
Defect Behavior

Fracture fabrication of precision single-crystal silicon surfaces for MEMS devices

2011 ◽  
Vol 35 (3) ◽  
pp. 406-415
Author(s):  
Alexander Sprunt ◽  
Alexander Slocum ◽  
Jeffrey H. Lang
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Mems Devices ◽  
Crystal Silicon

Reactivity of selectively terminated single crystal silicon surfaces

2010 ◽  
Vol 39 (8) ◽  
pp. 3256 ◽  
Author(s):  
Kathryn A. Perrine ◽  
Andrew V. Teplyakov
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Silicon

A TEMPERATURE-PROGRAMED DESORPTION STUDY OF THE ADSORPTION AND REACTIONS OF D2O ON SINGLE CRYSTAL SILICON SURFACES

1994 ◽  
Vol 01 (04) ◽  
pp. 505-507
Author(s):  
M.C. FLOWERS ◽  
N.B.H. JONATHAN ◽  
A. MORRIS ◽  
S. WRIGHT
Keyword(s):  
Single Crystal ◽  
Adsorption Kinetics ◽  
Single Crystal Silicon ◽  
Silicon Surfaces ◽  
Crystal Surfaces ◽  
Crystal Silicon ◽  
Single Crystal Surfaces ◽  
Langmuir Adsorption ◽  
First Order ◽  
Desorption Study

The adsorption of D 2O and subsequent desorption of D 2 and SiO from Si(100)-2×1 and Si(111)-7×7 single crystal surfaces have been investigated using the technique of temperatureprogramed desorption. It has been found that adsorption on Si(100)-2×1 is rapid and can be interpreted in terms of first-order Langmuir adsorption kinetics. In contrast, adsorption on the Si(111)-7×7 surface proceeds at a very much slower rate following an initial rapid uptake. It is found that the D 2 TPD peak arising from D 2 O exposure is very similar in shape, width, and desorption temperature to that from atomic deuterium exposure except that a small fraction of the adsorbed deuterium is retained to higher temperatures.

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