Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including the a-GaN plane. The grooves and slope (Cuboids) at the channel base are also investigated. The agitation does not assist in Cuboid removal or crystallographic planes etching rate enhancement. Finally, the impact of UV light on m and a-GaN crystal plane etching rates in TMAH has been studied with and without UV light. Accordingly, it is found that the m-GaN plane etching rate is enhanced from 0.69 to 1.09 nm/min with UV light; in the case of a-GaN plane etching, UV light enhances the etching rate from 2.94 to 4.69 nm/min.

Reaction Kinetics of Poly-Si Etching in TMAH Solution

Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study. The effect of water and TMAH concentration on the etching kinetics of poly-Si was investigated by using various concentrations of TMAH solution. It is found that H2O in TMAH solution plays an important role in etching poly-Si. Presence of dissolved CO2 and O2 in TMAH solution tends to inhibit etching of poly-Si. The concentration of dissolved CO2 and O2 in TMAH were reduced by Ar bubbling, thereby the poly-Si etching rate increased.

TEMPERATURE DEPENDENCE OF THE CONTRASTS OF THE ELECTRON HSQ RESIST AT DIFFERENT METHODS OF DEVELOPMENT

In this work a study of the dependence of the contrast value of a negative electron resist based on hydrogensilsesquioxane was carried out in the process of development in an aqueous alkaline-salt solution of NaOH-NaCl at different temperatures, and a similar study was carried out for a widespread method of development in a 25% TMAH solution.

Expansion of Dolomitic Rocks in TMAH and NaOH Solutions and Its Root Causes

In this paper, a tetramethylammonium hydroxide (TMAH) solution and homemade cement without alkali were used to eliminate the influence of the alkali-silica reaction (ASR) on the expansion of dolomitic rocks, and a NaOH solution was used as a comparison agent. The expansion of concrete microbars and dolomite powder compacts prepared from dolomitic rocks was tested. The expansion cracks and reaction products were investigated by X-ray diffraction, optical microscopy, scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS). The results showed that TMAH reacts with dolomite crystals in dolomitic rocks to form brucite and calcite. Through X-ray diffraction and SEM-EDS analysis, it can be determined that the chemical reaction between TMAH and dolomite crystal was dedolomitization. The expansion stress test and concrete microbar expansion test suggest that the alkali carbonate reaction (ACR) can produce expansion. Although both the ASR and the ACR were observed in the NaOH reaction system, but ASRgel was not found in the cracks, indicating that the ASR may be involved in the expansion process of concrete microbars and that the ACR is the root cause of the expansion. However, under the curing conditions of the TMAH solution, many ACR products were found around the crack, indicating that the expansion of the concrete in this system was caused entirely by the ACR.

Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors

4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and the BOX layer of the SOI substrate were etched by TMAH solution, and finally the silicon active layer with a thickness of 1.5 μm was remained on the 4H-SiC substrate. Using this silicon layer, Si photodiodes on 4H-SiC for the radiation hardened image sensors were fabricated and demonstrated.

The Expansion Cracks of Dolomitic Aggregates Cured in TMAH Solution Caused by Alkali–Carbonate Reaction

In this study, concrete microbars and rock prisms made of dolomitic aggregates were cured in a 1-mol/L tetramethylammonium hydroxide (TMAH) solution at 80 °C to avoid the effect of alkali–silica reaction (ASR) on expansion. The expansion of specimens was only caused by the alkali–carbonate reaction (ACR). The reason that self-made cement was used in this work was to ensure that the Mg2+ contained in the brucite originated only from dolomite. Expansion of concrete microbars and rock prisms was measured, the expansion cracks were systematically observed by orthogonal polarizing microscopy, and the products of ACR were analyzed by scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS). The results showed that the dolomite crystals in the dolomitic aggregates reacted with the TMAH solution and resulted in ACR, which formed calcite and brucite and led to cracking of the specimens. The source of the expansion was the dolomite crystals of the dolomite enrichment area. Expansion cracks either extended inside the rock or into the cement phase and eventually disappeared. The alkali–carbonate reaction significantly contributed to the expansion of dolomitic aggregates cured in TMAH solution at a later curing age.

Effects of curing condition and particle size of aggregate on the expansion and microstructure of dolomitic aggregates cured in TMAH solution

In this paper, the modified microbars prepared by dolomitic aggregates with three kinds of particle size and self-made cement without K + and Na + were cured in 1 and 2 N tetramethyl ammonium hydroxide (TMAH) solution at 20°C, 60°C and 80°C, respectively. TMAH was used as curing solution to exclude the expansion contribution of alkali–silica reaction. Effects of the concentration of TMAH solution, curing temperature and aggregate grain size on the expansion of dolomitic aggregates were systematically investigated to determine the expansion characteristics only caused by alkali–carbonate reaction (ACR). Expansion of modified microbars cured in TMAH solution was measured. The porosities of original and reacted aggregates were also measured. Microstructural studies were carried out by scanning electron microscopy (SEM) and thermo-gravimetric (TG) analysis. The results showed that the aggregate grain size and curing temperature can influence the expansion of modified microbars significantly. When the modified microbars prepared by aggregates with 2.5–5 mm grain size and cured in 1 N TMAH solution at 80°C, the samples exhibited obvious expansion only caused by ACR, which is beneficial to detect the ACR reactivity of dolomitic rocks exclusively in concrete engineering. Based on the pore structure analysis, there was a slight increase (13%) in porosities of aggregates cured for 140 days at 80°C. Rod-like brucite crystals formed in the process of ACR were also found in TG analysis and SEM images.

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching treatment, trigonal prisms were observed on sidewalls where m-plane GaN was exposed. For the investigated two types of light-emitting diodes (LEDs) with orthogonal arrangements, the LEDs with their larger sidewalls orientated along the [11–20] direction exhibited an additional 10% improvement in light output power after TMAH etching treatment compared to the LEDs with larger sidewalls orientated along the [1–100] direction.