Low-background neutron reflectometry from solid/liquid interfaces

Liquid cells are an increasingly common sample environment for neutron reflectometry experiments and are critical for measuring the properties of materials at solid/liquid interfaces. Background scattering determines the maximum useful scattering vector, and hence the spatial resolution, of the neutron reflectometry measurement. The primary sources of background are the liquid in the cell reservoir and the materials forming the liquid cell itself. Thus, characterization and mitigation of these background sources are necessary for improvements in the signal-to-background ratio and resolution of neutron reflectometry measurements employing liquid cells. Single-crystal silicon is a common material used for liquid cells due to its low incoherent scattering cross section for neutrons, and the path lengths of the neutron beam through silicon can be several centimetres in modern cell designs. Here, a liquid cell is constructed with a sub-50 µm thick liquid reservoir encased in single-crystal silicon. It is shown that, at high scattering vectors, inelastic scattering from silicon represents a significant portion of the scattering background and is, moreover, structured, confounding efforts to correct for it by established background subtraction techniques. A significant improvement in the measurement quality is achieved using energy-analyzed detection. Energy-analyzed detection reduces the scattering background from silicon by nearly an order of magnitude, and from fluids such as air and liquids by smaller but significant factors. Combining thin liquid reservoirs with energy-analyzed detection and the high flux of the CANDOR polychromatic reflectometer at the NIST Center for Neutron Research, a background-subtracted neutron reflectivity smaller than 10−8 from a liquid cell sample is reported.

Rotational varifocal moiré metalens made of single-crystal silicon meta-atoms for visible wavelengths

Metasurface lenses (metalenses) offer an ultrathin and simple optical system with dynamic functions that include focal length tuning. In this study, a rotational varifocal (i.e., moiré) metalens based on octagonal single-crystal silicon pillars was designed and fabricated to realize a high transmittance, whole 2π phase coverage, and polarization insensitivity for visible wavelengths. The moiré metalens consists of a pair of cascaded metasurface-based phase lattices and the focal length can be adjusted from negative to positive by mutual rotation. The fabricated moiré metalens demonstrated a focal length that can be tuned from −36 mm to −2 mm and from 2 to 12 mm by mutual rotation from −90° to 90°, and the experimental measurements agreed well with theoretical values at the design wavelength of 633 nm. Imaging was demonstrated at three distinct wavelengths of 633, 532, and 440 nm.

Communication—Electrodeposition of Indium Directly on Silicon

Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We show that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.

Temperature Dependence of The Thermo-Optic Coefficient In 4H-SiC and GaN Slabs At The Wavelength of 1550 nm

The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal Silicon Carbide (4H-SiC) and Gallium Nitride (GaN) have emerged as excellent building materials for high power and high temperature electronics, and wide parallel applications in photonics can be consequently forecasted in the near future, in particular in the infrared telecommunication band of λ=1500-1600 nm.In this paper, the thermo-optic coefficient (dn/dT) is experimentally measured in 4H-SiC and GaN substrates, from room temperature to 480 K, at the wavelength of 1550 nm. Specifically, the substrates, forming natural Fabry-Perot etalons, are exploited within a simple hybrid fiber–free space optical interferometric system to take accurate measurements of the transmitted optical power in the said temperature range. It is found that, for both semiconductors, dn/dT is itself remarkably temperature dependent, in particular quadratically for GaN and almost linearly for 4H-SiC.

Efficient and Stable Perovskite Solar Cells Based on Inorganic Hole Transport Materials

Although power conversion efficiencies of organic-inorganic lead halide perovskite solar cells (PSCs) are approaching those of single-crystal silicon solar cells, the working device stability due to internal and external factors, such as light, temperature, and moisture, is still a key issue to address. The current world-record efficiency of PSCs is based on organic hole transport materials, which are usually susceptible to degradation from heat and diffusion of dopants. A simple solution would be to replace the generally used organic hole transport layers (HTLs) with a more stable inorganic material. This review article summarizes recent contributions of inorganic hole transport materials to PSC development, focusing on aspects of device performance and long-term stability. Future research directions of inorganic HTLs in the progress of PSC research and challenges still remaining will also be discussed.