Density-matrix description of frequency-resolved secondary emission from quantum wells

2003 ◽  
Vol 238 (3) ◽  
pp. 494-497 ◽  
Author(s):  
Gianandrea Mannarini ◽  
Roland Zimmermann ◽  
Gerrit Kocherscheidt ◽  
Wolfgang Langbein
Keyword(s):  
Density Matrix ◽  
Quantum Wells ◽  
Secondary Emission ◽  
Matrix Description

Third-Harmonic Generation in Special Parabolic Quantum Wells

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu
Keyword(s):  
Quantum Well ◽  
Density Matrix ◽  
Quantum Wells ◽  
Harmonic Generation ◽  
Third Harmonic Generation ◽  
Third Harmonic ◽  
The Third ◽  
Compact Density ◽  
Asymmetric Quantum ◽  
Parabolic Quantum Wells

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.

LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN WURTZITEAlGaN/GaNDOUBLE QUANTUM WELLS: EFFECTS OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION

2009 ◽  
Vol 16 (01) ◽  
pp. 11-17
Author(s):  
L. ZHANG
Keyword(s):  
Refractive Index ◽  
Density Matrix ◽  
Quantum Wells ◽  
Structural Parameters ◽  
Matrix Approach ◽  
Third Order ◽  
Numerical Result ◽  
Analytical Formulas ◽  
Index Changes ◽  
Linear And Nonlinear

Based on the density-matrix approach and iterative treatment, a detailed procedure for the calculation of the linear and nonlinear intersubband refractive index changes (RICs) in wurtzite GaN-based coupling quantum wells (CQWs) is given. The simple analytical formulas for electronic eigenstates and the linear and third-order nonlinear RICs in the systems are also deduced. Numerical result on a typical AlGaN / GaN CQW shows that the linear and nonlinear RICs sensitively depend on the structural parameters of the CQW system as well as the doped fraction of nitride semicondutor.

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