Third-Harmonic Generation in Special Parabolic Quantum Wells

2013 ◽  
Vol 760-762 ◽  
pp. 392-396
Author(s):  
You Bin Yu

Third-harmonic generation in a special asymmetric quantum well is investigated. The third-harmonic generation coefficient is carried out by applying compact-density-matrix method. The numerical results are presented for a GaAs/AlGaAs asymmetric quantum well. The very large third-harmonic generation coefficient is obtained in this quantum well. Moreover, the third-harmonic generation coefficient dependents on the quantum well parameters are investigated, respectively.

2007 ◽  
Vol 21 (27) ◽  
pp. 1837-1845 ◽  
Author(s):  
LI ZHANG

Based on the density matrix approach and iterative treatment, the third-harmonic generation (THG) susceptibility of a wurtzite nitride coupling quantum well (CQW) with strong built-in electric fields have been theoretically investigated. The band non-parabolicity effect of nitride heterostructures has been taken into account. A typical wurtzite AlGaN/GaN CQW are chosen to perform numerical calculations. The result shows that, the THG coefficients sensitively depend on the structural parameters of the CQW system. Moreover, a strong THG process can be realized in the nitride CQW by choosing a group of appropriate structural parameters and doped fraction.


2004 ◽  
Vol 18 (01) ◽  
pp. 53-61 ◽  
Author(s):  
YOU-BIN YU ◽  
KANG-XIAN GUO

The influence of electron–phonon interaction on third-harmonic generation in cylindrical quantum wires are investigated. The third-harmonic generation coefficient is obtained using compact-density-matrix approach and iterative method, and the numerical results are presented for GaAs cylindrical quantum wires. The results show that the third-harmonic generation coefficient is greatly enhanced after taking into consideration the influence of electron–phonon interaction. It is about thirty times larger than that obtained by just considering electron states when electron–phonon resonance is met.


2015 ◽  
Vol 17 (3) ◽  
pp. 035505 ◽  
Author(s):  
Kang-Xian Guo ◽  
Bo Xiao ◽  
Yingchu Zhou ◽  
Zhongmin Zhang

2013 ◽  
Vol 19 (1) ◽  
pp. 12-17
Author(s):  
周丽萍 ZHOU Li-ping ◽  
于凤梅 YU Feng-mei ◽  
唐宇 TANG Yu

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 78 ◽  
Author(s):  
Zhi-Hai Zhang ◽  
Jian-Hui Yuan ◽  
Kang-Xian Guo ◽  
Elmustapha Feddi

In this paper, we investigate the effect of conduction band non-parabolicity (NPBE) on the third harmonic generation(THG), the linear and nonlinear intersub-band optical absorption coefficients (OACs) related with electronic states of double semi-V-shaped GaAs/Ga1−xAlxAs quantum wells(QWs) by using the compact-density-matrix approach. Simultaneously, the work is performed in the position dependent effective mass in order to compute the electronic structure for the system by the finite difference and self-consistent techniques. We also compare the results with and without considering NPBE. It is found that: (1) the NPBE has a significant influence on the sub-band energy levels of double semi-V-shaped QWs, and (2) the amplitude and position of the resonant peaks of the THG and nonlinear OACs in the case of considering NPBE show complicated behavior due to the energy dependent effective mass m*(E) where the energy value was chosen self-consistently.


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