Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
2020 ◽
Vol 257
(6)
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pp. 2000016
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2012 ◽
Vol 249
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pp. 480-484
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2016 ◽
Vol 14
(4)
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pp. 042302-42306
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1982 ◽
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pp. 401-409
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2015 ◽
Vol 253
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pp. 145-157
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