sp3s*Tight-binding parameters for transport simulations in compound semiconductors

2000 ◽  
Vol 27 (5-6) ◽  
pp. 519-524 ◽  
Author(s):  
Gerhard Klimeck ◽  
R Chris Bowen ◽  
Timothy B Boykin ◽  
Thomas A Cwik
2011 ◽  
Vol 84 (15) ◽  
Author(s):  
L.-C. Tung ◽  
P. Cadden-Zimansky ◽  
J. Qi ◽  
Z. Jiang ◽  
D. Smirnov

1990 ◽  
Vol 42 (2) ◽  
pp. 1452-1454 ◽  
Author(s):  
Seong Jae Lee ◽  
Hahn Soo Chung ◽  
Kyun Nahm ◽  
Chul Koo Kim

1994 ◽  
Vol 49 (16) ◽  
pp. 10918-10925 ◽  
Author(s):  
Marcel H. F. Sluiter ◽  
Prabhakar P. Singh

1997 ◽  
Vol 491 ◽  
Author(s):  
C. Z. Wang ◽  
B. C. Pan ◽  
M. S. Tang ◽  
H. Haas ◽  
M. Sígalas ◽  
...  

ABSTRACTWe have developed a tight-binding model which goes beyond the traditional two-center approximation and allows the tight-binding parameters to scale according to the bonding environment. Our studies show that this environment-dependent tight-binding model improves remarkably the accuracy and transferability of the potential to describe the structures and properties of higher coordinated metallic systems in addition to those of low coordinated covalent systems.


1998 ◽  
Vol 57 (21) ◽  
pp. 13660-13666 ◽  
Author(s):  
H. Rosner ◽  
R. Hayn ◽  
J. Schulenburg

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