Nearest-neighbor sp3s* tight-binding parameters based on the hybrid quasi-particle self-consistent GW method verified by modeling of type-II superlattices

2017 ◽  
Vol 121 (23) ◽  
pp. 235704 ◽  
Author(s):  
Akitaka Sawamura ◽  
Jun Otsuka ◽  
Takashi Kato ◽  
Takao Kotani
Keyword(s):  
Nearest Neighbor ◽  
Tight Binding ◽  
Type Ii ◽  
Binding Parameters ◽  
Quasi Particle ◽  
Self Consistent ◽  
Type Ii Superlattices

Improved tight-binding parameters of III-V semiconductor alloys and their application to type-II superlattices

2021 ◽  
Author(s):  
Akitaka Sawamura ◽  
Takashi Kato ◽  
Satofumi SOUMA
Keyword(s):  
Absorption Coefficient ◽  
Energy Levels ◽  
Tight Binding ◽  
Band Gaps ◽  
Type Ii ◽  
Binding Parameters ◽  
Semiconductor Alloys ◽  
Effective Masses ◽  
Type Ii Superlattices ◽  
Ternary Semiconductor

Abstract A simple tight-binding method for ternary semiconductor alloys is generalized to calculate the properties of the semiconductor alloys accurately. Specifically independently adjustable parameters, which represent compositional disorder, are incorporated in all the ternary tight-binding parameters. Energy levels and effective masses agree well with the reference values only by the proposed method. We have applied the method to calculate the band gaps and a spectrum of the absorption coefficient of (InAs)/(GaInSb) type-II superlattices. The calculated band-gaps agree well with the experimental ones and we could well reproduce the shape of the absorption coefficient spectrum calculated by an empirical pseudopotential scheme.

scholarly journals TIGHT-BINDING PARAMETERS FOR GRAPHENE

2011 ◽  
Vol 25 (03) ◽  
pp. 163-173 ◽  
Author(s):  
RUPALI KUNDU
Keyword(s):  
Band Structure ◽  
Density Of States ◽  
Nearest Neighbor ◽  
Tight Binding ◽  
Nearest Neighbors ◽  
Structure Calculation ◽  
Band Structure Calculation ◽  
First Principle ◽  
Binding Parameters ◽  
Band Dispersion

In this article, we have reproduced the tight-binding π band dispersion of graphene including up to third nearest-neighbors and also calculated the density of states of π band within the same model. The aim was to find out a set of parameters descending in order as distance towards third nearest-neighbor increases compared to that of first and second nearest-neighbors with respect to an atom at the origin. Here we have discussed two such sets of parameters by comparing the results with first principle band structure calculation.1

HOLE STATES LOCALIZED AT TYPE II HETEROINTERFACE

2003 ◽  
Vol 02 (06) ◽  
pp. 411-417 ◽  
Author(s):  
M. O. NESTOKLON
Keyword(s):  
Tight Binding ◽  
Type Ii ◽  
Spin Orbit ◽  
Tight Binding Model ◽  
Binding Parameters ◽  
Binding Model ◽  
Orbit Splitting ◽  
Semiconductor Interface ◽  
Spin Orbit Splitting ◽  
Tight Binding Method

A theory of Tamm-like hole states at type II heterointerface has been developed for zink-blende semiconductors. The consideration has been carried out in the microscopic tight-binding model with allowance made for the spin-orbit splitting of the valence band. It has been demonstrated that the tight-binding method describes Tamm-like hole states at type II semiconductor interface. Localization energy dependence on interface tight-binding parameters has been analyzed.

Electroabsorption in the type II superlattices

1992 ◽  
Vol 60 (16) ◽  
pp. 1969-1971 ◽  
Author(s):  
Shaozhong Li ◽  
Jacob B. Khurgin
Keyword(s):  
Type Ii ◽  
Type Ii Superlattices

Self-consistent tight binding model adapted for hydrocarbon systems

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner
Keyword(s):  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Self Consistent
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