Comparison of Ion Implantation Profiles Obtained by AES/Sputtering Measurements and Monte Carlo Calculations

1985 ◽  
pp. 49-69
Author(s):  
H. Bubert
1988 ◽  
Vol 128 ◽  
Author(s):  
John F. Knudsen ◽  
Robert C. Bowman ◽  
Duane D. Smith ◽  
Steven C. Moss

ABSTRACTIon-implantation induced amorphization has been used to modify the linearity of response of ultrafast photoconductive switches fabricated on SOS. The extent of amorphization was determined using various materials characterization techniques. TRIM-86 Monte Carlo calculations were used to model the defect densities produced by ion implantation. Linearity of response is critically dependent upon the nature of the semiconductor region under metallic contacts and the character of the response is opposite to that expected from reports in the literature.


2021 ◽  
Vol 134 ◽  
pp. 103688
Author(s):  
Ihsan Farouki ◽  
Rashdan Malkawi ◽  
Sayel Marashdeh

2013 ◽  
Vol 160 (8) ◽  
pp. F877-F882 ◽  
Author(s):  
B. Puchala ◽  
Y.-L. Lee ◽  
D. Morgan

2006 ◽  
Vol 151 (1) ◽  
pp. 295-298 ◽  
Author(s):  
B. Mitrica ◽  
I.M. Brancus ◽  
H. Rebel ◽  
J. Wentz ◽  
A. Bercuci ◽  
...  

2002 ◽  
Vol 66 (4) ◽  
Author(s):  
Steven C. Pieper ◽  
K. Varga ◽  
R. B. Wiringa

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