Co and Cd have been codoped in ZnO using a simple solid state reaction technique to synthesize dilute magnetic oxide semiconductors of composition Zn0.9Co0.1−xCdxO (x = 0.0-0.1with an increment of 0.02). Hexagonal wurtzite structure has been obtained for samples up tox = 0.06, using X-ray diffractometry. However, atx = 0.08and 0.1, secondary peak of CdO is observed. Raman spectra of the samples have been obtained in 200–800 cm−1range. UV-VIS spectrophotometer is used to study the optical properties, which shows that band gap energy decreases with the increase in Cd concentration. A weak ferromagnetic behavior was evident which decreased further by adding Cd in the series. Room temperature resistivity measurements performed using four-point probe technique showed that their values lie in the semiconductor range. Structural morphology of the samples has been investigated by a scanning electron microscope and grain size has been determined. Raman spectra and Fourier transform infrared spectroscopy revealed the successful incorporation of Co and Cd ions into the host ZnO lattice.
Magnetic Oxide Semiconductors