Methodology of measuring the transverse piezoresistance of semiconductors

1988 ◽  
Vol 31 (9) ◽  
pp. 909-911
Author(s):  
V. Ya. Duchal ◽  
V. N. Ermakov ◽  
V. V. Kolomoets ◽  
Yu. A. Okhrimenko ◽  
V. S. Timoshchuk
Keyword(s):  
Transverse Piezoresistance

Design and Calibration of Resistive Stress Sensors on 4H Silicon Carbide

2018 ◽  
Author(s):  
Richard C. Jaeger ◽  
Jun Chen ◽  
Jeffrey C. Suhling ◽  
Leonid Fursin
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Stress Sensitivity ◽  
Well Drilling ◽  
Deep Well ◽  
Stress Sensors ◽  
Wide Range ◽  
Higher Temperature ◽  
Van Der Pauw ◽  
Transverse Piezoresistance

Stress sensors have shown potential to provide “health monitoring” of a wide range of issues related to packaging of integrated circuits, and silicon carbide offers the advantage of much higher temperature sensor operation with application in packaged high-voltage, high-power SiC devices as well as both automotive and aerospace systems, geothermal plants, and deep well drilling, to name a few. This paper discusses the theory and uniaxial calibration of resistive stress sensors on 4H silicon carbide (4H-SiC) and provides new theoretical descriptions for four-element resistor rosettes and van der Pauw (VDP) stress sensors. The results delineate the similarities and differences relative to those on (100) silicon: resistors on the silicon face of 4H-SiC respond to only four of the six components of the stress state; a four-element rosette design exists for measuring the in-plane stress components; two stress quantities can be measured in a temperature compensated manner. In contrast to silicon, only one combined coefficient is required for temperature compensated stress measurements. Calibration results from a single VDP device can be used to calculate the basic lateral and transverse piezoresistance coefficients for 4H-SiC material. Experimental results are presented for lateral and transverse piezoresistive coefficients for van der Pauw structures and p- and n-type resistors. The VDP devices exhibit the expected 3.16 times higher stress sensitivity than standard resistor rosettes.

Accounting for the crossover phenomenon in the response of longitudinal and transverse piezoresistance gauges in shock wave experiments

1988 ◽  
Vol 63 (2) ◽  
pp. 349-354 ◽  
Author(s):  
Z. Rosenberg ◽  
N. S. Brar
Keyword(s):  
Shock Wave ◽  
Transverse Piezoresistance

Transverse piezoresistance in nanosize piezoresistors

2008 ◽  
Author(s):  
V.A. Gridchin ◽  
A.V. Gridchin ◽  
V.Ju. Bunzina
Keyword(s):  
Transverse Piezoresistance

Fabrication of N-doped 3C-SiC nanobelts with selected (11¯0) top surface and their enhanced transverse piezoresistance behaviours

2018 ◽  
Vol 44 (15) ◽  
pp. 19021-19027 ◽  
Author(s):  
Xiaoxiao Li ◽  
Yun Tian ◽  
Fengmei Gao ◽  
Lin Wang ◽  
Shanliang Chen ◽  
...  
Keyword(s):  
Transverse Piezoresistance

Flexible Integrated Sensors: Transverse Piezoresistance and Longitudinal Thermal Resistance of One Single Carbon Fiber Beam

2019 ◽  
Vol 4 (12) ◽  
pp. 1900802
Author(s):  
Jingcheng Huang ◽  
Guoning Chen ◽  
Xiaoyan Hu ◽  
Songhui Li ◽  
Jingxiu Wen ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Thermal Resistance ◽  
Integrated Sensors ◽  
Transverse Piezoresistance

Lateral stress measurement in shock‐loaded targets with transverse piezoresistance gauges

1985 ◽  
Vol 58 (8) ◽  
pp. 3072-3076 ◽  
Author(s):  
Z. Rosenberg ◽  
Y. Partom
Keyword(s):  
Stress Measurement ◽  
Lateral Stress ◽  
Transverse Piezoresistance
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