AII amacrine cells in the mammalian retina are connected via electrical synapses to on-cone bipolar cells and to other AII amacrine cells. To understand synaptic integration in these interneurons, we need information about the junctional conductance ( gj), the membrane resistance ( rm), the membrane capacitance ( Cm), and the cytoplasmic resistivity ( Ri). Due to the extensive electrical coupling, it is difficult to obtain estimates of rm, as well as the relative contribution of the junctional and nonjunctional conductances to the total input resistance of an AII amacrine cell. Here we used dual voltage-clamp recording of pairs of electrically coupled AII amacrine cells in an in vitro slice preparation from rat retina and applied meclofenamic acid (MFA) to block the electrical coupling and isolate single AII amacrines electrically. In the control condition, the input resistance ( Rin) was ∼620 MΩ and the apparent rm was ∼760 MΩ. After block of electrical coupling, determined by estimating gj in the dual recordings, Rin and rm were ∼4,400 MΩ, suggesting that the nongap junctional conductance of an AII amacrine cell is ∼16% of the total input conductance. Control experiments with nucleated patches from AII amacrine cells suggested that MFA had no effect on the nongap junctional membrane of these cells. From morphological reconstructions of AII amacrine cells filled with biocytin, we obtained a surface area of ∼900 μm2 which, with a standard value for Cm of 0.01 pF/μm2, corresponds to an average capacitance of ∼9 pF and a specific membrane resistance of ∼41 kΩ cm2. Together with information concerning synaptic connectivity, these data will be important for developing realistic compartmental models of the network of AII amacrine cells.
Electrotonic signal processing in AII amacrine cells: compartmental models and passive membrane properties for a gap junction-coupled retinal neuron
