Strain Dependent Performance Analysis of InGaN Multi-junction Solar Cell

2021 ◽  
Author(s):  
Md. Aminur Rahman ◽  
Md. Jahirul Islam ◽  
Md. Rafiqul Islam ◽  
M. A. Parvez Mahmud
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Junction Solar Cell ◽  
Strain Dependent

scholarly journals Correction to: Strain Dependent Performance Analysis of InGaN Multi‑junction Solar Cell

2021 ◽  
Author(s):  
Md. Aminur Rahman ◽  
Md. Jahirul Islam ◽  
Md. Rafiqul Islam ◽  
M. A. Parvez Mahmud
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Junction Solar Cell ◽  
Strain Dependent

Performance analysis of vertical multi-junction solar cell with front surface diffusion for high concentration

Solar Energy ◽  
2013 ◽  
Vol 94 ◽  
pp. 8-18 ◽  
Author(s):  
Yupeng Xing ◽  
Peide Han ◽  
Shuai Wang ◽  
Yujie Fan ◽  
Peng Liang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Surface Diffusion ◽  
Front Surface ◽  
High Concentration ◽  
Junction Solar Cell

Performance Analysis of Different Structures of Organic Solar Cell

2017 ◽  
Vol 7 (2) ◽  
pp. 37
Author(s):  
Dhuriya Deepti ◽  
Kumar Brijesh ◽  
Chauhan R.K. ◽  
◽  
◽  
...  
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Organic Solar Cell

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

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