Efficiency Enhancement of GaAs Single-Junction Solar Cell by Nanotextured Window Layer

In order to improve efficiency of flexible III-V semiconductor multi-junction solar cells, it is important to enhance the current density for efficiency improvement and to attain an even efficiency of solar cells on a curved surface. In this study, the nanotextured InAlP window layer of a GaAs single-junction solar cell was employed to suppress reflectance in broad range. The nanotextured surface affects the reflectance suppression with the broad spectrum of wavelength, which causes it to increase the current density and efficiency of the GaAs single-junction solar cell and alleviate the efficiency drop at the high incident angle of the light source. Those results show the potential of the effectively suppressed reflectance of multi-junction solar cells and even performance of solar cells attached on a curved surface.

Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth’s...

Robust Molecular Dipole Induced Surface Functionalization of Inorganic Perovskites for Efficient Solar Cells

CsPbI3 inorganic perovskite shows high potential for single-junction or tandem solar cells due to its suitable bandgap energy (Eg=~1.7 eV), but defect-assisted nonradiative recombination and unmatched interfacial band alignment within...

Study of GeSn (0.524 eV) Single-Junction Thermophotovoltaic Cells Based on Device Transport Model

Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, thermal-electricity conversion performance governed by GeSn diode has been systematically studied in its normal and inverted structure. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping N d(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can reach the higher performance. To reduce material consumption, an economical active layer can be comprised of 100-300 nm emitter and 3-6 μm base to attain comparable performance as that for the optimal configuration. The results can offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.

Updated Progresses in Perovskite Solar Cells

In the last decade, perovskite solar cells (PSCs) have greatly drawn researchers’ attention, with the power conversion efficiency surging from 3.8% to 25.5%. PSCs possess the merits of low cost, simple fabrication process and high performance, which could be one of the most promising photovoltaic technologies in the future. In this review, we focus on the summary of the updated progresses in single junction PSCs including efficiency, stability and large area module. Then, the important progresses in tandem solar cells are briefly discussed. A prospect into the future of the field is also included.