single junction
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Solar RRL ◽  
2022 ◽  
pp. 2100621
Mehrdad Najafi ◽  
Mirjam Theelen ◽  
Henri Fledderus ◽  
Dong Zhang ◽  
Valerio Zardetto ◽  

2022 ◽  
Vol 12 (2) ◽  
pp. 601
Chae-Won Kim ◽  
Gwang-Yeol Park ◽  
Jae-Cheol Shin ◽  
Hyo-Jin Kim

In order to improve efficiency of flexible III-V semiconductor multi-junction solar cells, it is important to enhance the current density for efficiency improvement and to attain an even efficiency of solar cells on a curved surface. In this study, the nanotextured InAlP window layer of a GaAs single-junction solar cell was employed to suppress reflectance in broad range. The nanotextured surface affects the reflectance suppression with the broad spectrum of wavelength, which causes it to increase the current density and efficiency of the GaAs single-junction solar cell and alleviate the efficiency drop at the high incident angle of the light source. Those results show the potential of the effectively suppressed reflectance of multi-junction solar cells and even performance of solar cells attached on a curved surface.

2022 ◽  
Vol 120 (1) ◽  
pp. 010402
Bruno Ehrler ◽  
Anita W. Y. Ho-Baillie ◽  
Eline M. Hutter ◽  
Jovana V. Milić ◽  
Murad J. Y. Tayebjee ◽  

2022 ◽  
Elias Zsolt Stutz ◽  
Mahdi Zamani ◽  
Djamshid Damry ◽  
Lea Buswell ◽  
Rajrupa Paul ◽  

Zinc phosphide, Zn3P2, is a semiconductor with a high absorption coefficient in the spectral range relevant for single junction photovoltaic applications. It is made of elements abundant in the Earth’s...

Junming Qiu ◽  
Qisen Zhou ◽  
Donglin Jia ◽  
Yunfei Wang ◽  
Shuang Li ◽  

CsPbI3 inorganic perovskite shows high potential for single-junction or tandem solar cells due to its suitable bandgap energy (Eg=~1.7 eV), but defect-assisted nonradiative recombination and unmatched interfacial band alignment within...

2022 ◽  
Vol 234 ◽  
pp. 111413
Riku Isoaho ◽  
Timo Aho ◽  
Arto Aho ◽  
Antti Tukiainen ◽  
Jarno Reuna ◽  

2021 ◽  
Xin-Miao Zhu ◽  
Min Cui ◽  
Yu Wang ◽  
Tian-Jing Yu ◽  
Jin-Xiang Deng ◽  

Abstract Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, thermal-electricity conversion performance governed by GeSn diode has been systematically studied in its normal and inverted structure. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping N d(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can reach the higher performance. To reduce material consumption, an economical active layer can be comprised of 100-300 nm emitter and 3-6 μm base to attain comparable performance as that for the optimal configuration. The results can offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.

2021 ◽  
Vol 233 ◽  
pp. 111337
J. Krügener ◽  
M. Rienäcker ◽  
S. Schäfer ◽  
M. Sanchez ◽  
S. Wolter ◽  

Nano Energy ◽  
2021 ◽  
pp. 106712
Jiakai Zhou ◽  
Qian Huang ◽  
Yi Ding ◽  
Guofu Hou ◽  
Ying Zhao

2021 ◽  
Vol 38 (10) ◽  
pp. 107801
Zihan Qu ◽  
Fei Ma ◽  
Yang Zhao ◽  
Xinbo Chu ◽  
Shiqi Yu ◽  

In the last decade, perovskite solar cells (PSCs) have greatly drawn researchers’ attention, with the power conversion efficiency surging from 3.8% to 25.5%. PSCs possess the merits of low cost, simple fabrication process and high performance, which could be one of the most promising photovoltaic technologies in the future. In this review, we focus on the summary of the updated progresses in single junction PSCs including efficiency, stability and large area module. Then, the important progresses in tandem solar cells are briefly discussed. A prospect into the future of the field is also included.

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