A scalar-relativistic extension of the linear combination of Gaussian-type orbitals local density functional method: application to AuH, AuCl and Au2

1992 ◽  
Vol 199 (5) ◽  
pp. 491-496 ◽  
Author(s):  
Oliver D. Häberlen ◽  
Notker Rösch
2005 ◽  
Vol 108-109 ◽  
pp. 697-702 ◽  
Author(s):  
R. Jones ◽  
A. Carvalho ◽  
J. Coutinho ◽  
Vitor J.B. Torres ◽  
Sven Öberg ◽  
...  

The donor and acceptor levels of defects in Ge as well as in Si are found using a local density functional method applied to large H-terminated defective clusters. The surfaces of the clusters are modified so that their band gaps are aligned with experimental values. It is shown that the resulting energies of the first donor and acceptor levels are within about 0.2 eV of the experimental values.


Sign in / Sign up

Export Citation Format

Share Document