Model semiconductor dielectric function

1971 ◽  
Vol 10 (5) ◽  
pp. 310
1981 ◽  
Vol 24 (8) ◽  
pp. 4729-4735 ◽  
Author(s):  
Ami Chand Sharma ◽  
Sushil Auluck

1981 ◽  
Vol 23 (2) ◽  
pp. 874-878 ◽  
Author(s):  
Prabha Sharma ◽  
Sushil Auluck

1972 ◽  
Vol 54 (1) ◽  
pp. 355-368 ◽  
Author(s):  
V. K. Rashenov ◽  
M. G. Foigel ◽  
R. A. Alarashi

1971 ◽  
Vol 32 (3) ◽  
pp. 623-626 ◽  
Author(s):  
Erio Tosatti ◽  
Giuseppe Pastori Parravicini

1982 ◽  
Vol 26 (6) ◽  
pp. 3474-3474
Author(s):  
Ami Chand Sharma ◽  
Sushil Auluck

2015 ◽  
Vol 8 (2) ◽  
pp. 2148-2155 ◽  
Author(s):  
Abderrahim Benchaib ◽  
Abdesselam Mdaa ◽  
Izeddine Zorkani ◽  
Anouar Jorio

The vanadium dioxide is a material thermo chromium which sees its optical properties changing at the time of the transition from the phase of semiconductor state ↔ metal, at a critical temperature of 68°C. The study of the optical properties of a thin layer of VO₂ thickness 82 nm, such as the dielectric function, the index of refraction, the coefficient ofextinction, the absorption’s coefficient, the reflectivity, the transmittivity, in the photonic spectrum of energy ω located inthe interval: 0.001242 ≤ ω (ev) ≤ 6, enables us to control well its practical utility in various applications, like the intelligentpanes, the photovoltaic, paintings for increasing energy efficiency in buildings, detectors of infra-red (I.R) or ultra-violet(U.V). We will make simulations with Maple and compare our results with those of the literature


1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


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