Cyclic grain boundary migration in aluminum during high temperature fatigue

1980 ◽  
Vol 14 (5) ◽  
pp. 551-554 ◽  
Author(s):  
Parviz Yavari ◽  
Terence G. Langdon
2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.


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