Interaction of O2, CO, H2O, H2 and N2 with thin chromium films studied by internal stress measurements

1982 ◽  
Vol 89 (2) ◽  
pp. 133-138 ◽  
Author(s):  
H.P. Martinz ◽  
R. Abermann
1983 ◽  
Vol 130 (11) ◽  
pp. 2242-2249 ◽  
Author(s):  
B. J. Curtis ◽  
H. R. Brunner ◽  
M. Ebnoether

1993 ◽  
Vol 318 ◽  
Author(s):  
Andrej N. Aleshin ◽  
Klaus Schroder

ABSTRACTThe influence of silicon overlayers on the electrical conductivity of 5 nm to 10 nm thick chromium films has been studied. It was found that the deposition of silicon decreases the resistivity of Cr-film by up to 24 %. Possible mechanisms for the resistance decrease due to the silicon overlayer are discussed.


1976 ◽  
Vol 34 (1) ◽  
pp. 111-114 ◽  
Author(s):  
G.A. Hope ◽  
I.M. Ritchie
Keyword(s):  

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