New apparatus and instruments

Micron (1969) ◽  
1981 ◽  
Vol 12 (4) ◽  
pp. 379-380
Keyword(s):  
New Apparatus ◽  
Apparatus And Instruments

New Apparatus for Preserving Beer

1876 ◽  
Vol 1 (4supp) ◽  
pp. 57-57
Author(s):  
Louis Weinmar
Keyword(s):  
New Apparatus

Development of New Apparatus to Evaluate Ultrasonic Reflection Characteristic for Wrinkling in Press Forming

2017 ◽  
Vol 10 (02) ◽  
pp. 170-174 ◽  
Author(s):  
YUJI SEGAWA ◽  
TAKUYA KURIYAMA ◽  
YASUO MARUMO ◽  
TAEKYUNG LEE ◽  
YASUHIRO IMAMURA ◽  
...  
Keyword(s):  
Reflection Characteristic ◽  
Press Forming ◽  
New Apparatus

A New Large Scale Technic for Quantitative Recovery of Enteroviruses by Adsorption on Suspended Glass Powder. Application to Surface and Drinking Waters of the Paris Area

1982 ◽  
Vol 14 (4-5) ◽  
pp. 281-290
Author(s):  
Ph Vilaginès ◽  
B Sarrette ◽  
C Danglot ◽  
R Vilaginès
Keyword(s):  
River Water ◽  
Surface Waters ◽  
Large Scale ◽  
Glass Powder ◽  
Virus Concentration ◽  
Drinking Waters ◽  
Paris Area ◽  
New Apparatus ◽  
Quantitative Recovery

The aim of this work is to describe a new and inexpensive glass powder apparatus allowing virus concentration from 500 1 sample of water (10). Its efficiency was determined by analysis of drinking and surface waters preinoculated by Poliovirus. The detection of viruses from river water is compared when 500 1 (new apparatus) or 10 1 (preceeding apparatus) (7) are processed. The proposed new 500 1 apparatus allowed the recuperation of viruses in 100 % of the analysed samples the 10 1 one allowing their recuperation in only 50 % samples. This method was applied to the virus determination in the surface and drinking waters of the Paris area.

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

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