Development of New Apparatus to Evaluate Ultrasonic Reflection Characteristic for Wrinkling in Press Forming

2017 ◽  
Vol 10 (02) ◽  
pp. 170-174 ◽  
Author(s):  
YUJI SEGAWA ◽  
TAKUYA KURIYAMA ◽  
YASUO MARUMO ◽  
TAEKYUNG LEE ◽  
YASUHIRO IMAMURA ◽  
...  
Keyword(s):  
Reflection Characteristic ◽  
Press Forming ◽  
New Apparatus

Development of Apparatus for Evaluation of Wrinkles in Sheet Metal Forming Using Angle Beam Technique

2018 ◽  
Vol 792 ◽  
pp. 185-189
Author(s):  
Yuji Segawa ◽  
Daichi Nishikubo ◽  
Yasuo Marumo ◽  
Tomohiro Nonaka ◽  
Yutaka Sakata
Keyword(s):  
Sheet Metal ◽  
Sheet Metal Forming ◽  
Metal Forming ◽  
Ultrasonic Measurement ◽  
Reflection Characteristic ◽  
Electro Discharge Machining ◽  
Press Forming ◽  
New Apparatus ◽  
The Relationship ◽  
Beam Technique

Ultrasonic measurement is used to evaluate wrinkles during sheet metal forming. The authors developed a new apparatus for investigating the relationship between the wrinkles in press forming and the ultrasonic reflection characteristic of an angle beam. The new evaluation apparatus was composed of probe-fixing parts, an upper die, a middle die, and a lower die. A specimen was sandwiched by a pair of dies in the evaluation apparatus. Angle beam probes for transmission and reception were set on the upper die. Specimens in the form of plates having periodic trapezoidal wrinkles were fabricated by electro-discharge machining. In the new evaluation apparatus, the specimen is placed in contact with the die. Wrinkling was found to change the ultrasonic reflection characteristic of an angle beam. The new apparatus can thus be used to evaluate wrinkles using the angle beam technique.

New Apparatus for Preserving Beer

1876 ◽  
Vol 1 (4supp) ◽  
pp. 57-57
Author(s):  
Louis Weinmar
Keyword(s):  
New Apparatus

A New Large Scale Technic for Quantitative Recovery of Enteroviruses by Adsorption on Suspended Glass Powder. Application to Surface and Drinking Waters of the Paris Area

1982 ◽  
Vol 14 (4-5) ◽  
pp. 281-290
Author(s):  
Ph Vilaginès ◽  
B Sarrette ◽  
C Danglot ◽  
R Vilaginès
Keyword(s):  
River Water ◽  
Surface Waters ◽  
Large Scale ◽  
Glass Powder ◽  
Virus Concentration ◽  
Drinking Waters ◽  
Paris Area ◽  
New Apparatus ◽  
Quantitative Recovery

The aim of this work is to describe a new and inexpensive glass powder apparatus allowing virus concentration from 500 1 sample of water (10). Its efficiency was determined by analysis of drinking and surface waters preinoculated by Poliovirus. The detection of viruses from river water is compared when 500 1 (new apparatus) or 10 1 (preceeding apparatus) (7) are processed. The proposed new 500 1 apparatus allowed the recuperation of viruses in 100 % of the analysed samples the 10 1 one allowing their recuperation in only 50 % samples. This method was applied to the virus determination in the surface and drinking waters of the Paris area.

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

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