The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structures

Modulated Structures ◽

The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structures

Surface Science ◽

10.1016/0039-6028(86)90385-7 ◽

1986 ◽

Vol 174 (1-3) ◽

pp. 55-64 ◽

Cited By ~ 17

Author(s):

T.C. Lee ◽

M.Y. Yen ◽

P. Chen ◽

A. Madhukar

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

High Energy Electron ◽

Diffraction Intensity ◽

Temporal Behaviour ◽

Modulated Structures ◽

The Dynamics Of Reflection High Energy Electron Diffraction Intensity Behaviour As A Probe Of Crystal Growth: Computer Simulations And Measurements During Molecular Beam Epitaxial Growth Of GaAs/AlXGa1-XAs(100)

10.1117/12.946322 ◽

1985 ◽

Cited By ~ 4

Author(s):

A. Madhukar ◽

S. V. Ghaisas ◽

T. C. Lee ◽

M. Y. Yen ◽

P. Chen ◽

...

Keyword(s):

Crystal Growth ◽

Electron Diffraction ◽

Epitaxial Growth ◽

Computer Simulations ◽

Molecular Beam ◽

High Energy ◽

High Energy Electron ◽

Diffraction Intensity ◽

Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates

10.1063/1.102878 ◽

1990 ◽

Vol 56 (25) ◽

pp. 2533-2535 ◽

Cited By ~ 16

Author(s):

M. Y. Yen ◽

T. W. Haas

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Frequency analysis of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on nominally oriented (111)B substrates

10.1063/1.114029 ◽

1995 ◽

Vol 66 (5) ◽

pp. 610-612 ◽

Cited By ~ 2

Author(s):

B. J. Garcia ◽

C. Fontaine ◽

A. Muñoz‐Yagüe

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Frequency Analysis ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Observation of reflection high energy electron diffraction intensity oscillations during Si molecular beam epitaxial growth from disilane

10.1063/1.107046 ◽

1992 ◽

Vol 60 (18) ◽

pp. 2255-2257 ◽

Cited By ~ 17

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study

10.1063/1.95739 ◽

1985 ◽

Vol 46 (12) ◽

pp. 1148-1150 ◽

Cited By ~ 85

Author(s):

A. Madhukar ◽

T. C. Lee ◽

M. Y. Yen ◽

P. Chen ◽

J. Y. Kim ◽

...

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

High Energy Electron ◽

Surface Kinetics ◽

Diffraction Intensity ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Measurement of reflection high-energy electron diffraction oscillations during molecular-beam epitaxial growth of GaAs on a rotating substrate

10.1116/1.586241 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1784 ◽

Cited By ~ 6

Author(s):

G. W. Turner

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Surface reconstructions of Si(001) observed using reflection‐high‐ energy‐electron diffraction during molecular‐beam epitaxial growth from disilane

10.1063/1.105694 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3419-3421 ◽

Cited By ~ 24

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Surface Reconstructions ◽

Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb

Journal of Applied Physics ◽

10.1063/1.335362 ◽

1985 ◽

Vol 57 (10) ◽

pp. 4572-4577 ◽

Cited By ~ 29

Author(s):

T. H. Chiu ◽

W. T. Tsang

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

B doping effect on reflection high‐energy electron diffraction intensity oscillation during gas source silicon molecular beam epitaxial growth

10.1063/1.103418 ◽

1990 ◽

Vol 57 (8) ◽

pp. 780-782 ◽

Cited By ~ 10

Author(s):

Hiroyuki Hirayama ◽

Kazuhisa Koyama ◽

Masayuki Hiroi ◽

Toru Tatsumi

Keyword(s):

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

High Energy Electron ◽

Diffraction Intensity ◽

Intensity Oscillation ◽

Gas Source ◽

B Doping ◽