Prevention of substrate melt-back by Se addition during liquid phase epitaxial growth of GaAs on GaAs-coated Si

1994 ◽  
Vol 20 (5-6) ◽  
pp. 335-338 ◽  
Author(s):  
Kim Dong-Keun ◽  
Lee Byung-Teak
1982 ◽  
Vol 43 (C5) ◽  
pp. C5-3-C5-10 ◽  
Author(s):  
M. C. Joncour ◽  
J. L. Benchimol ◽  
J. Burgeat ◽  
M. Quillec

1972 ◽  
Vol 1 (4) ◽  
pp. 437-457 ◽  
Author(s):  
G. B. Stringfellow ◽  
P. F. Lindquist ◽  
R. A. Burmeister

1984 ◽  
Vol 70 (1-2) ◽  
pp. 162-168 ◽  
Author(s):  
S. Iyer ◽  
E.K. Stefanakos ◽  
A. Abul-Fadl ◽  
W.J. Collis

1995 ◽  
Vol 66 (19) ◽  
pp. 2531-2533 ◽  
Author(s):  
Dong‐Keun Kim ◽  
Ju‐Heon Ahn ◽  
Byung‐Teak Lee ◽  
H. J. Lee ◽  
S. S. Cha ◽  
...  

2003 ◽  
Vol 252 (1-3) ◽  
pp. 79-86 ◽  
Author(s):  
J.K. Radhakrishnan ◽  
S. Sitharaman ◽  
S.C. Gupta

Author(s):  
Yi Lu ◽  
Peter Dekker ◽  
Judith Dawes

We investigated fabrication of neodymium doped thin film optical waveguide-based devices as potential active sources for planar integrated optics. Liquid-phase epitaxial growth was used to fabricate neodymium-doped yttrium aluminum borate films on compatible lattice-matched un-doped yttrium aluminum borate substrates. We observed the refractive index contrast of the doped and un-doped crystal layers by differential interference contrast microscopy. In addition, characterization by X-ray powder diffraction, optical absorption and luminescence spectra demonstrated the crystal quality and uniformity and optical guiding of the resulting thin films.   


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