Morphological instabilities of nickel and cobalt silicides on silicon

1991 ◽  
Vol 53 ◽  
pp. 87-91 ◽  
Author(s):  
S. Nygren ◽  
D. Caffin ◽  
M. Östling ◽  
F.M. d'Heurle
Keyword(s):  
Morphological Instabilities ◽  
Cobalt Silicides

Failure Fronts in Brittle Materials and Their Morphological Instabilities

2005 ◽  
Author(s):  
Michael A. Grinfeld ◽  
Scott E. Schoenfeld ◽  
Tim W. Wright
Keyword(s):  
Brittle Materials ◽  
Morphological Instabilities

Chemical degradation and morphological instabilities during focused ion beam prototyping of polymers

2014 ◽  
Vol 16 (4) ◽  
pp. 1658-1666 ◽  
Author(s):  
A. Orthacker ◽  
R. Schmied ◽  
B. Chernev ◽  
J. E. Fröch ◽  
R. Winkler ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Degradation ◽  
Morphological Instabilities

Morphological instabilities of lamellar eutectics

1996 ◽  
Vol 27 (3) ◽  
pp. 635-656 ◽  
Author(s):  
Alain Karma ◽  
Armand Sarkissian
Keyword(s):  
Morphological Instabilities

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Thin Film Transistor ◽  
Surface Preparation ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Cobalt Nickel ◽  
Silicon Materials ◽  
Cobalt Silicides ◽  
Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

Morphological instabilities and ion beam mixing in Ge

1985 ◽  
Vol 7-8 ◽  
pp. 639-644 ◽  
Author(s):  
B.R. Appleton ◽  
O.W. Holland ◽  
D.B. Poker ◽  
J. Narayan ◽  
D. Fathy
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Morphological Instabilities

Morphological instabilities induced by ultrathin films on W(111)

1993 ◽  
Vol 287-288 ◽  
pp. 826-830 ◽  
Author(s):  
Theodore E. Madey ◽  
Jie Guan ◽  
Dong Cheng-Zhi ◽  
S.M. Shivaprasad
Keyword(s):  
Ultrathin Films ◽  
Morphological Instabilities

Morphological instabilities of stressed solids

1998 ◽  
Vol 08 (PR4) ◽  
pp. Pr4-213-Pr4-220 ◽  
Author(s):  
J. Colin ◽  
J. Grilhé ◽  
N. Junqua
Keyword(s):  
Morphological Instabilities
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