Misfit stress relaxation in composite nanoparticles

Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem

Bulletin of the Russian Academy of Sciences Physics ◽

10.3103/s1062873814040297 ◽

2014 ◽

Vol 78 (4) ◽

pp. 307-310 ◽

Cited By ~ 4

Author(s):

E. M. Trukhanov ◽

A. P. Vasilenko ◽

I. D. Loshkarev ◽

A. V. Kolesnikov

Keyword(s):

Stress Relaxation ◽

Misfit Stress

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Misfit stress relaxation in wide bandgap semiconductor heterostructures with trigonal and hexagonal crystal structure

Journal of Applied Physics ◽

10.1063/5.0076893 ◽

2022 ◽

Vol 131 (2) ◽

pp. 025301

Author(s):

A. M. Smirnov ◽

A. V. Kremleva ◽

Sh. Sh. Sharofidinov ◽

A. E. Romanov

Keyword(s):

Crystal Structure ◽

Stress Relaxation ◽

Wide Bandgap ◽

Semiconductor Heterostructures ◽

Hexagonal Crystal Structure ◽

Hexagonal Crystal ◽

Misfit Stress ◽

Wide Bandgap Semiconductor

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Misfit stress relaxation in composite core-shell nanowires with parallelepiped cores using rectangular prismatic dislocation loops

Journal of Physics Conference Series ◽

10.1088/1742-6596/993/1/012021 ◽

2018 ◽

Vol 993 ◽

pp. 012021 ◽

Cited By ~ 1

Author(s):

S A Krasnitckii ◽

D R Kolomoetc ◽

A M Smirnov ◽

M Yu Gutkin

Keyword(s):

Stress Relaxation ◽

Core Shell ◽

Dislocation Loops ◽

Misfit Stress ◽

Shell Nanowires

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In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy

MRS Proceedings ◽

10.1557/proc-583-167 ◽

1999 ◽

Vol 583 ◽

Cited By ~ 3

Author(s):

E. Chason ◽

J. Yin ◽

K. Tetz ◽

R. Beresford ◽

L. B. Freund ◽

...

Keyword(s):

Elevated Temperature ◽

Stress Relaxation ◽

Epitaxial Growth ◽

Real Time ◽

Misfit Strain ◽

Misfit Stress ◽

Relaxation Kinetics ◽

Substrate Interface ◽

Temperature Relaxation

AbstractWe present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit strain, different mechanisms of stress relaxation are observed. In heterolayers of InGaAs grown on GaAs (001) substrates, relaxation occurs by a dislocationmediated mechanism. In SiGe layers grown on Si (001) substrates at elevated temperature, relaxation occurs by the formation of islands on the surface. These islands elastically relax misfit stress without the introduction of dislocations at the island-substrate interface.

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Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures

Applied Physics Letters ◽

10.1063/1.4716465 ◽

2012 ◽

Vol 100 (20) ◽

pp. 202103 ◽

Cited By ~ 38

Author(s):

Matthew T. Hardy ◽

Po Shan Hsu ◽

Feng Wu ◽

Ingrid L. Koslow ◽

Erin C. Young ◽

...

Keyword(s):

Stress Relaxation ◽

Trace Analysis ◽

Basal Plane ◽

Misfit Stress

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Initial stages of misfit stress relaxation by rectangular prismatic dislocation loops in composite nanostructures

Journal of Physics Conference Series ◽

10.1088/1742-6596/541/1/012007 ◽

2014 ◽

Vol 541 ◽

pp. 012007

Author(s):

M Yu Gutkin ◽

A M Smirnov

Keyword(s):

Stress Relaxation ◽

Dislocation Loops ◽

Misfit Stress ◽

Composite Nanostructures

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Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer

Journal of Applied Physics ◽

10.1063/1.363265 ◽

1996 ◽

Vol 80 (6) ◽

pp. 3238-3243 ◽

Cited By ~ 9

Author(s):

H. Nishino ◽

I. Sugiyama ◽

Y. Nishijima

Keyword(s):

Stress Relaxation ◽

Relaxation Mechanism ◽

Misfit Stress

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Initial stages of misfit stress relaxation through the formation of prismatic dislocation loops in GaN–Ga2O3 composite nanostructures

Physics of the Solid State ◽

10.1134/s1063783416080138 ◽

2016 ◽

Vol 58 (8) ◽

pp. 1611-1621 ◽

Cited By ~ 6

Author(s):

M. Yu. Gutkin ◽

A. M. Smirnov

Keyword(s):

Stress Relaxation ◽

Dislocation Loops ◽

Misfit Stress ◽

Composite Nanostructures

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Influence of misfit stress relaxation by power-law creep and plasticity on kinetics of coarsening of precipitates

Scripta Materialia ◽

10.1016/j.scriptamat.2019.04.016 ◽

2019 ◽

Vol 168 ◽

pp. 81-85 ◽

Cited By ~ 1

Author(s):

J. Svoboda ◽

Y.V. Shan ◽

E. Kozeschnik ◽

F.D. Fischer

Keyword(s):

Stress Relaxation ◽

Power Law ◽

Misfit Stress ◽

Power Law Creep ◽

Kinetics Of

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Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

Applied Physics Letters ◽

10.1063/1.112128 ◽

1994 ◽

Vol 65 (9) ◽

pp. 1162-1164 ◽

Cited By ~ 29

Author(s):

Y. Androussi ◽

A. Lefebvre ◽

B. Courboulès ◽

N. Grandjean ◽

J. Massies ◽

...

Keyword(s):

Stress Relaxation ◽

Misfit Stress ◽

Highly Strained

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