Corrigendum to “Electronic and optical properties of Zn-doped InGaAs emission layer with vacancy defects: A DFT study” [Optik 143 (2017) 135–141]

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Optik ◽  
2017 ◽  
Vol 143 ◽  
pp. 135-141 ◽  
Author(s):  
Jing Guo ◽  
Minhua Zhou ◽  
Jing Zhao ◽  
Lei Zhou ◽  
Liansong Xiong

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The combination of defect engineering and strain engineering for the modulation of the mechanical, electronic and optical properties of monolayer transition metal dichalcogenides (TMDs).


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