On the micromechanics of void growth by prismatic-dislocation loop emission

2006 ◽  
Vol 54 (4) ◽  
pp. 735-755 ◽  
Author(s):  
D.C. Ahn ◽  
P. Sofronis ◽  
R. Minich
1979 ◽  
Vol 39 (5) ◽  
pp. 685-691 ◽  
Author(s):  
N. J. Salamon ◽  
M. Comninou

2018 ◽  
Vol 143 ◽  
pp. 384-390 ◽  
Author(s):  
Sanshan Jiao ◽  
Wenjing Tu ◽  
Peigen Zhang ◽  
Wei Zhang ◽  
Liguang Qin ◽  
...  

1972 ◽  
Vol 50 (1) ◽  
pp. 125-133 ◽  
Author(s):  
J. Dundurs ◽  
N. J. Salamon

2010 ◽  
Vol 25 (12) ◽  
pp. 2292-2296 ◽  
Author(s):  
Masaki Tanaka ◽  
Grace S. Liu ◽  
Tomonobu Kishida ◽  
Kenji Higashida ◽  
Ian M. Robertson

Punched-out dislocations emitted from an octahedral oxide precipitate in single-crystal silicon were investigated using high-voltage electron microscopy and tomography (HVEM-tomography) to understand the mechanism of softening caused by the oxide precipitates. In the present paper, direct evidence of the transition of a punched-out prismatic dislocation loop to a slip dislocation is presented. The punched-out dislocation grows into a large matrix dislocation loop by absorption of interstitial atoms, which were produced during oxide precipitation.


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