Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography
2010 ◽
Vol 25
(12)
◽
pp. 2292-2296
◽
Keyword(s):
Punched-out dislocations emitted from an octahedral oxide precipitate in single-crystal silicon were investigated using high-voltage electron microscopy and tomography (HVEM-tomography) to understand the mechanism of softening caused by the oxide precipitates. In the present paper, direct evidence of the transition of a punched-out prismatic dislocation loop to a slip dislocation is presented. The punched-out dislocation grows into a large matrix dislocation loop by absorption of interstitial atoms, which were produced during oxide precipitation.
2000 ◽
Vol 23
(3)
◽
pp. 261-270
◽
1991 ◽
Vol 49
◽
pp. 190-191
1991 ◽
Vol 49
◽
pp. 436-437
1992 ◽
Vol 50
(1)
◽
pp. 580-581
1974 ◽
Vol 32
◽
pp. 60-61
1971 ◽
Vol 29
◽
pp. 212-213
1977 ◽
Vol 35
◽
pp. 570-571
◽
1982 ◽
Vol 40
◽
pp. 598-599