Pore sealing of k 2.0 dielectrics assisted by self-assembled monolayers deposited from vapor phase

2014 ◽  
Vol 120 ◽  
pp. 240-245 ◽  
Author(s):  
Silvia Armini ◽  
Jana Loyo Prado ◽  
Mikhail Krishtab ◽  
Johan Swerts ◽  
Patrick Verdonck ◽  
...  
2012 ◽  
Vol 195 ◽  
pp. 146-149 ◽  
Author(s):  
Y. Sun ◽  
J. Swerts ◽  
P. Verdonck ◽  
A. Maheshwari ◽  
J.L. Prado ◽  
...  

Self-assembled monolayers (SAMs) deposition is being recently explored to help sealing the pores of a k=2.0 material. In order to enable a covalent chemical low-k surface functionalization by SAMs, a hydroxyl groups density as high as 1 to 2.5 OH groups/nm2 is required. This surface modification must be carefully controlled to confine the k below 10%. In this paper, the effects of plasma temperature, time and power on the SAMs deposition and plasma-induced damage are investigated. The main findings are that there is always a trade-off between surface hydroxyl groups density and bulk damage. A thick modified layer allows the SAM molecules to penetrate inside the pores which results in a decreased porosity and an increased k value with respect to correspondent plasma-treated pristine substrates.


2010 ◽  
Vol 114 (47) ◽  
pp. 19993-19999 ◽  
Author(s):  
Leonardo Salazar Alarcón ◽  
Lin Chen ◽  
Vladimir A. Esaulov ◽  
Julio E. Gayone ◽  
Esteban A. Sánchez ◽  
...  

2016 ◽  
Vol 16 (3) ◽  
pp. 2792-2795 ◽  
Author(s):  
Youngwoo Kim ◽  
Hungu Kang ◽  
Azuho Tsunoi ◽  
Tomohiro Hayashi ◽  
Masahiko Hara ◽  
...  

Langmuir ◽  
2017 ◽  
Vol 33 (15) ◽  
pp. 3847-3854 ◽  
Author(s):  
L. Kankate ◽  
A. Aguf ◽  
H. Großmann ◽  
M. Schnietz ◽  
R. Tampé ◽  
...  

Author(s):  
Anna Rissanen ◽  
Kirsi Tappura ◽  
Mari Laamanen ◽  
Riikka Puurunen ◽  
Elina Fa ◽  
...  

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