Process-induced warpage and stress estimation of through glass via embedded interposer carrier with ring-type framework

2022 ◽  
Vol 129 ◽  
pp. 114476
Author(s):  
Pei-Chen Huang ◽  
Yu-Min Lin ◽  
Hsing-Ning Liu ◽  
Chang-Chun Lee
Keyword(s):  
Ring Type ◽  
Stress Estimation

Analytic Description of Various Ring Type Surface Plasmon Microresonators

2016 ◽  
Vol 5 (1) ◽  
pp. 50-63
Author(s):  
H. S. Haroyan ◽  
◽  
Kh.V. Nerkararyan ◽  
Keyword(s):  
Surface Plasmon ◽  
Analytic Description ◽  
Ring Type

Nano Probe Analysis of Device Characteristics Affected by Ring Type Crystalline Defect

2011 ◽  
Author(s):  
Jong Hak Lee ◽  
Yu Jun Lee ◽  
Jung Sam Kim ◽  
Seo Kyung Jeong ◽  
Min Su Kim ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Physical Method ◽  
Hybrid Analysis ◽  
Electrical Method ◽  
Ring Type ◽  
Crystalline Defects ◽  
Address Data ◽  
Signal Input ◽  
Crystalline Defect ◽  
Top View

Abstract In this work, crystalline defects (dislocations) occurred in the silicon substrate during annealing SOD (Spin On Dielectric) which is an easy choice for its superior STI gap-fill ability. The reversal of address data that share same SIO (Signal Input Out) line in a DQ arises from crystalline defects. The failure analysis of physical methods has difficulty finding minute defects within the active because it is scarcely detectable from the top view. Situation can be well understood by electrical analysis using the nano probe. Due to its ability to probing contact nodes around the fail area, a ring type crystalline defect which is hardly detected from the top view was effectively analyzed by 3D TEM with the assistance of nano probe. This work shows that hybrid analysis of electrical method by nano probe and physical method by 3D TEM is useful and effective in failure analysis in semiconductor.

Sign in / Sign up

Export Citation Format

Share Document