Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes

Materials Science and Engineering B ◽

10.1016/j.mseb.2021.115279 ◽

2021 ◽

Vol 271 ◽

pp. 115279

Author(s):

Abdur-Rehman Anwar ◽

Muhammad Usman ◽

Munaza Munsif ◽

Kiran Saba

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Nanoscale Research Letters ◽

10.1186/s11671-018-2539-9 ◽

2018 ◽

Vol 13 (1) ◽

Author(s):

Zi-Hui Zhang ◽

Sung-Wen Huang Chen ◽

Chunshuang Chu ◽

Kangkai Tian ◽

Mengqian Fang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Mg Doping ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Greatly improved efficiency droop for InGaN-based green light emitting diodes by quaternary content superlattice electron blocking layer

2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) ◽

10.1109/nusod.2015.7292799 ◽

2015 ◽

Author(s):

Da-Wei Lin ◽

An-Jye Tzou ◽

Jhih-Kai Huang ◽

Bing-Cheng Lin ◽

Chun-Yen Chang ◽

...

Keyword(s):

Light Emitting Diodes ◽

Green Light ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

Applied Physics Letters ◽

10.1063/1.4756791 ◽

2012 ◽

Vol 101 (13) ◽

pp. 131113 ◽

Author(s):

Roy B. Chung ◽

Changseok Han ◽

Chih-Chien Pan ◽

Nathan Pfaff ◽

James S. Speck ◽

...

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

Applied Physics Letters ◽

10.1063/1.3531753 ◽

2010 ◽

Vol 97 (26) ◽

pp. 261103 ◽

Author(s):

C. H. Wang ◽

C. C. Ke ◽

C. Y. Lee ◽

S. P. Chang ◽

W. T. Chang ◽

...

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Hole Injection ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

Applied Physics Letters ◽

10.1063/1.4747802 ◽

2012 ◽

Vol 101 (8) ◽

pp. 081120 ◽

Author(s):

Ray-Ming Lin ◽

Sheng-Fu Yu ◽

Shoou-Jinn Chang ◽

Tsung-Hsun Chiang ◽

Sheng-Po Chang ◽

...

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Ingan Layer ◽

Electron Blocking Layer ◽

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Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

Applied Physics Letters ◽

10.1063/1.4817800 ◽

2013 ◽

Vol 103 (6) ◽

pp. 061104 ◽

Author(s):

Jun Hyuk Park ◽

Dong Yeong Kim ◽

Sunyong Hwang ◽

David Meyaard ◽

E. Fred Schubert ◽

...

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Overall Efficiency

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Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition electron blocking layer

2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim incorporating the Australasian Conference on Optics, Lasers and Spectroscopy and the Australian Conference on Optical Fibre Technology ◽

10.1109/iqec-cleo.2011.6193935 ◽

2011 ◽

Author(s):

C. H. Wang ◽

W. T. Chang ◽

S. P. Chang ◽

J. C. Li ◽

H. C. Kuo ◽

...

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Applied Physics Letters ◽

10.1063/1.3441373 ◽

2010 ◽

Vol 96 (22) ◽

pp. 221105 ◽

Author(s):

Suk Choi ◽

Hee Jin Kim ◽

Seong-Soo Kim ◽

Jianping Liu ◽

Jeomoh Kim ◽

...

Keyword(s):

Visible Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

Applied Physics Letters ◽

10.1063/1.3153508 ◽

2009 ◽

Vol 94 (23) ◽

pp. 231123 ◽

Author(s):

Sang-Heon Han ◽

Dong-Yul Lee ◽

Sang-Jun Lee ◽

Chu-Young Cho ◽

Min-Ki Kwon ◽

...

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Multiple Quantum Well ◽

Efficiency Droop ◽

Multiple Quantum ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.11.059 ◽

2017 ◽

Vol 468 ◽

pp. 562-566 ◽

Author(s):

C.K. Wang ◽

K.C. Hung ◽

Y.Z. Chiou ◽

J.S. Jheng ◽

S.P. Chang ◽

...

Keyword(s):

Light Emitting Diodes ◽

Efficiency Droop ◽

Blocking Layer ◽

Electron Blocking Layer ◽

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