Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

2010 ◽  
Vol 97 (26) ◽  
pp. 261103 ◽  
Author(s):  
C. H. Wang ◽  
C. C. Ke ◽  
C. Y. Lee ◽  
S. P. Chang ◽  
W. T. Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

2012 ◽  
Vol 101 (13) ◽  
pp. 131113 ◽  
Author(s):  
Roy B. Chung ◽  
Changseok Han ◽  
Chih-Chien Pan ◽  
Nathan Pfaff ◽  
James S. Speck ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

2012 ◽  
Vol 101 (8) ◽  
pp. 081120 ◽  
Author(s):  
Ray-Ming Lin ◽  
Sheng-Fu Yu ◽  
Shoou-Jinn Chang ◽  
Tsung-Hsun Chiang ◽  
Sheng-Po Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Blocking Layer ◽  
Ingan Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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