Modeling of Ga1−xInxAs1−y−zNySbz/GaAs quantum well properties for near-infrared lasers
2013 ◽
Vol 16
(6)
◽
pp. 1936-1942
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Keyword(s):
Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1 xN
2004 ◽
Vol 16
(3)
◽
pp. 511-519
◽
2016 ◽
Vol 79
◽
pp. 20-25
◽
Keyword(s):
2019 ◽
Vol 34
(8)
◽
pp. 1555-1566
◽
Keyword(s):