Trivacancy in silicon: A combined DLTS and ab-initio modeling study
2009 ◽
Vol 404
(23-24)
◽
pp. 4565-4567
◽
Keyword(s):
2001 ◽
Vol 21
(4)
◽
pp. 496-504
◽
2009 ◽
Vol 404
(23-24)
◽
pp. 4565-4567
1998 ◽
Vol 108
(1)
◽
pp. 351-358
◽
Keyword(s):
2018 ◽
Vol 122
(51)
◽
pp. 9792-9805
◽
Keyword(s):