Epitaxial growth of La2Zr2O7 buffer layers for YBa2Cu3O7−δ coated conductors on metallic substrates using pulsed laser deposition

2009 ◽  
Vol 469 (7-8) ◽  
pp. 288-292 ◽  
Author(s):  
L.L. Ying ◽  
Z.Y. Liu ◽  
Y.M. Lu ◽  
B. Gao ◽  
F. Fan ◽  
...  
1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.


2017 ◽  
Vol 27 (4) ◽  
pp. 1-5
Author(s):  
Kyung-Pil Ko ◽  
Soon-Mi Choi ◽  
Won-Jae Oh ◽  
Insung Park ◽  
Seung-Hyun Moon ◽  
...  

2012 ◽  
Vol 51 (9S2) ◽  
pp. 09MF06
Author(s):  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jong Hoon Lee ◽  
Min Wook Pin ◽  
Mi Seon Park ◽  
...  

2012 ◽  
Vol 51 ◽  
pp. 09MF06
Author(s):  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jong Hoon Lee ◽  
Min Wook Pin ◽  
Mi Seon Park ◽  
...  

2009 ◽  
Vol 182 (10) ◽  
pp. 2887-2889 ◽  
Author(s):  
R. Ohba ◽  
J. Ohta ◽  
K. Shimomoto ◽  
T. Fujii ◽  
K. Okamoto ◽  
...  

1995 ◽  
Vol 5 (2) ◽  
pp. 1932-1935 ◽  
Author(s):  
Y. Yamagata ◽  
C.-S. Choi ◽  
T. Fujishima ◽  
T. Ikegami ◽  
K. Ebihara ◽  
...  

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