Ripple current loss measurement with DC bias condition for high temperature superconducting power cable using calorimetry method

2010 ◽  
Vol 470 (20) ◽  
pp. 1601-1605 ◽  
Author(s):  
D.W. Kim ◽  
J.G. Kim ◽  
A.R. Kim ◽  
M. Park ◽  
I.K. Yu ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Cable ◽  
Loss Measurement ◽  
Current Loss ◽  
High Temperature Superconducting ◽  
Dc Bias ◽  
Bias Condition

Installation and operation of the Southwire 30-meter high-temperature superconducting power cable

2001 ◽  
Vol 11 (1) ◽  
pp. 2467-2472 ◽  
Author(s):  
J.P. Stovall ◽  
J.A. Demko ◽  
P.W. Fisher ◽  
M.J. Gouge ◽  
J.W. Lue ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Cable ◽  
High Temperature Superconducting

Development of 10 kA high temperature superconducting power cable for railway systems

2012 ◽  
Vol 111 (6) ◽  
pp. 063910 ◽  
Author(s):  
M. Tomita ◽  
M. Muralidhar ◽  
K. Suzuki ◽  
Y. Fukumoto ◽  
A. Ishihara
Keyword(s):  
High Temperature ◽  
Power Cable ◽  
High Temperature Superconducting ◽  
Railway Systems

Investigation of Device Interactions Between Two MOSFETs in Si CMOS

2008 ◽  
Author(s):  
T. Hatakeyama ◽  
K. Fushinobu ◽  
K. Okazaki
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
High Voltage ◽  
Small Distance ◽  
Cmos Inverter ◽  
Experimental Works ◽  
Dc Bias ◽  
High Temperature Condition ◽  
Device Operation ◽  
Bias Condition

Experimental works about the device interactions between nMOS and pMOS in bulk Si CMOS were performed. In the bulk Si CMOS, in the case that the distance between two MOSFETs is not enough, it is important to consider the risk of the device interactions between nMOS and pMOS. In this work, we fabricated bulk Si CMOS, in which the distance between pMOS and nMOS can be variable. And we observed the characteristics of the device operation by using fabricated CMOS under the dc bias condition. In this research, we focused on the leakage current between two MOSFETs in CMOS inverter depending on the distance between two MOSFETs, applied voltage and temperature. Experimental results showed that our fabricated CMOS shows quite small leakage current and the leakage current is less than 1% compared to CMOS on state current even with small distance between two MOSFETs at the high voltage condition and the high temperature condition.

Development of a High-Temperature Superconducting Gas-Insulated Power Cable

2020 ◽  
Vol 30 (6) ◽  
pp. 1-7
Author(s):  
Peter Cheetham ◽  
Aws Al-Taie ◽  
Srikar Telikapalli ◽  
Taylor Stamm ◽  
Chul Han Kim ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Cable ◽  
High Temperature Superconducting

High-temperature superconducting tri-axial power cable

2003 ◽  
Vol 392-396 ◽  
pp. 1180-1185 ◽  
Author(s):  
M.J. Gouge ◽  
M.J. Cole ◽  
J.A. Demko ◽  
P.W. Fisher ◽  
C.A. Foster ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Cable ◽  
High Temperature Superconducting
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