Investigation of Device Interactions Between Two MOSFETs in Si CMOS

2008 ◽  
Author(s):  
T. Hatakeyama ◽  
K. Fushinobu ◽  
K. Okazaki
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
High Voltage ◽  
Small Distance ◽  
Cmos Inverter ◽  
Experimental Works ◽  
Dc Bias ◽  
High Temperature Condition ◽  
Device Operation ◽  
Bias Condition

Experimental works about the device interactions between nMOS and pMOS in bulk Si CMOS were performed. In the bulk Si CMOS, in the case that the distance between two MOSFETs is not enough, it is important to consider the risk of the device interactions between nMOS and pMOS. In this work, we fabricated bulk Si CMOS, in which the distance between pMOS and nMOS can be variable. And we observed the characteristics of the device operation by using fabricated CMOS under the dc bias condition. In this research, we focused on the leakage current between two MOSFETs in CMOS inverter depending on the distance between two MOSFETs, applied voltage and temperature. Experimental results showed that our fabricated CMOS shows quite small leakage current and the leakage current is less than 1% compared to CMOS on state current even with small distance between two MOSFETs at the high voltage condition and the high temperature condition.

High Temperature Capability of High Voltage 4H-SiC JBS

2012 ◽  
Vol 711 ◽  
pp. 124-128 ◽  
Author(s):  
Maxime Berthou ◽  
Philippe Godignon ◽  
Bertrand Vergne ◽  
Pierre Brosselard
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Leakage Current ◽  
High Voltage ◽  
Room Temperature ◽  
Operating Temperature ◽  
Reverse Current ◽  
Temperature Capability ◽  
Schottky Devices ◽  
Current Behaviour

This paper presents the high blocking capability of the 4H-SiC tungsten Schottky and junction barrier Schottky (JBS) diodes at room temperature as well as at high operating temperature. First, we present the design of the proposed devices and the process employed for their fabrication. In a second part, their forward and reverse characteristics at room temperature will be presented. Our rectifiers exhibit blocking capability up to 9kV at room temperature. Then, we investigate the reverse current behaviour at 5kV from room temperature to 250°C under vacuum. JBS and Schottky devices that are capable to block 8kV at room temperature, show leakage current inferior to 100µA at 250°C when reverse biased at 5kV. It confirms the capability of Silicon Carbide to produce devices capable of operation at temperatures and voltages above the Silicon limits.

Investigation of Thick Film Technology for High Temperature Applications

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000184-000191 ◽  
Author(s):  
Zhangming Zhou ◽  
Jinzi Cui ◽  
Fang Yu ◽  
Kun Fang ◽  
Zhenzhen Shen ◽  
...  
Keyword(s):  
High Temperature ◽  
Fracture Surface ◽  
Thick Film ◽  
Leakage Current ◽  
Surface Analysis ◽  
Constant Bias ◽  
Fracture Surface Analysis ◽  
Dc Bias ◽  
Thick Film Technology ◽  
Temperature Applications

For electronics operating at 300°C, thick film technology has been proposed as a suitable interconnection technology to create modules. This work examines the leakage current with constant bias (100V) at 300°C. The leakage current increased significantly within the first few hours of aging. The effect of 300°C aging with dc bias on the adhesion of multilayer thick film test structures was also studied. The aged adhesion was a function of bias polarity. Fracture surface analysis results are presented. Bi in the PtPdAu conductor appears to play a role in both the leakage current and adhesion phenomena observed.

4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics

2017 ◽  
Vol 897 ◽  
pp. 669-672 ◽  
Author(s):  
Shinichiro Kuroki ◽  
Tatsuya Kurose ◽  
Hirofumi Nagatsuma ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Leakage Current ◽  
High Voltage ◽  
Logic Gate ◽  
Harsh Environment ◽  
Test Elements ◽  
Voltage Swing

For logic gate with higher voltage swing, 4H-SiC pseudo-CMOS logic inverter with four nMOS was suggested and demonstrated, and a high voltage swing of 4.4 V was achieved at VDD=5 V. Simple nMOS inverters were also investigated. Both of pseudo-CMOS and nMOS inverters were operated at a high temperature of 200°C. For future SiC large integrated circuits, junction leakage current between n+ regions were also investigated with the comb-shaped test elements.

An Environmental Wet Cell For High Voltage Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 18-19
Author(s):  
N.J. Tighe ◽  
H.M. Flower ◽  
P.R. Swann
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Image Quality ◽  
Inelastic Scattering ◽  
High Voltage ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Environmental Cell ◽  
Water Saturated ◽  
High Temperature Gas

A differentially pumped environmental cell has been developed for use in the AEI EM7 million volt microscope. In the initial version the column of gas traversed by the beam was 5.5mm. This permited inclusion of a tilting hot stage in the cell for investigating high temperature gas-specimen reactions. In order to examine specimens in the wet state it was found that a pressure of approximately 400 torr of water saturated helium was needed around the specimen to prevent dehydration. Inelastic scattering by the water resulted in a sharp loss of image quality. Therefore a modified cell with an ‘airgap’ of only 1.5mm has been constructed. The shorter electron path through the gas permits examination of specimens at the necessary pressure of moist helium; the specimen can still be tilted about the side entry rod axis by ±7°C to obtain stereopairs.

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition

2020 ◽  
Vol 13 (9) ◽  
pp. 095504
Author(s):  
Ayumu Shimizu ◽  
Shintaro Tsuno ◽  
Masahiro Kamiyama ◽  
Keiju Ishibashi ◽  
Akira Kitamoto ◽  
...  
Keyword(s):  
High Temperature ◽  
High Rate ◽  
High Temperature Condition

Molecular Modeling and Simulation of Transketolase from Orthosiphon stamineus

2019 ◽  
Vol 15 (4) ◽  
pp. 308-317
Author(s):  
Mei Ling Ng ◽  
Zaidah binti Rahmat ◽  
Mohd Shahir Shamsir bin Omar
Keyword(s):  
High Temperature ◽  
Protein Function ◽  
3D Model ◽  
High Capacity ◽  
Antitumor Activities ◽  
Pharmacological Activities ◽  
Orthosiphon Stamineus ◽  
Lower Blood ◽  
Pharmaceutical Industries ◽  
High Temperature Condition

Background: Orthosiphon stamineus is a traditional medicinal plant in Southeast Asia countries with various well-known pharmacological activities such as antidiabetic, diuretics and antitumor activities. Transketolase is one of the proteins identified in the leaves of the plant and transketolase is believed able to lower blood sugar level in human through non-pancreatic mechanism. In order to understand the protein behavioral properties, 3D model of transketolase and analysis of protein structure are of obvious interest. Methods: In the present study, 3D model of transketolase was constructed and its atomic characteristics revealed. Besides, molecular dynamic simulation of the protein at 310 K and 368 K deciphered transketolase may be a thermophilic protein as the structure does not distort even at elevated temperature. This study also used the protein at 310 K and 368 K resimulated back at 310 K environment. Results: The results revealed that the protein is stable at all condition which suggest that it has high capacity to adapt at different environment not only at high temperature but also from high temperature condition to low temperature where the structure remains unchanged while retaining protein function. Conclusion: The thermostability properties of transketolase is beneficial for pharmaceutical industries as most of the drug making processes are at high temperature condition.

nCocktail Therapy towards High Temperature/High Voltage Lithium Metal Battery via Solvation Sheath Structure Tuning

2021 ◽  
Author(s):  
Tianle Zheng ◽  
Jianwei Xiong ◽  
Xiaotang Shi ◽  
Bingying Zhu ◽  
Ya-Jun Cheng ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Lithium Metal ◽  
Lithium Metal Battery ◽  
Sheath Structure

Investigation Into Thermal Stress Characteristics of Pipe-in-Pipe Under High Temperature Condition

2018 ◽  
Author(s):  
Si-Hwa Jeong ◽  
Min-Gu Won ◽  
Nam-Su Huh ◽  
Yun-Jae Kim ◽  
Young-Jin Oh ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Thermal Stress ◽  
High Temperature ◽  
Temperature Distribution ◽  
Heat Transfer Analysis ◽  
Piping System ◽  
Curved Pipe ◽  
High Temperature Condition ◽  
Single Pipe ◽  
Radiation Conditions

In this paper, the thermal stress characteristics of the pipe-in-pipe (PIP) system under high temperature condition are analyzed. The PIP is a type of pipe applied in sodium-cooled faster reactor (SFR) and has a different geometry from a single pipe. In particular, under the high temperature condition of the SFR, the high thermal stress is generated due to the temperature gradient occurring between the inner pipe and outer pipe. To investigate the thermal stress characteristics, three cases are considered according to geometry of the support. The fully constrained support and intermediate support are considered for case 1 and 2, respectively. For case 3, both supports are applied to the actual curved pipe. The finite element (FE) analyses are performed in two steps for each case. Firstly, the heat transfer analysis is carried out considering the thermal conduction, convection and radiation conditions. From the heat transfer analysis, the temperature distribution results in the piping system are obtained. Secondly, the structural analysis is performed considering the temperature distribution results and boundary conditions. Finally, the effects of the geometric characteristics on the thermal stress in the PIP system are analyzed.

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