Influence of random pyramid surface texture on silver screen-printed contact formation for monocrystalline silicon wafer solar cells

2015 ◽  
Vol 132 ◽  
pp. 589-596 ◽  
Author(s):  
Ankit Khanna ◽  
Prabir K. Basu ◽  
Aleksander Filipovic ◽  
Vinodh Shanmugam ◽  
Christian Schmiga ◽  
...  
2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Enyu Wang ◽  
He Wang ◽  
Hong Yang

At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.


2013 ◽  
Vol 3 (1) ◽  
pp. 102-107 ◽  
Author(s):  
Enrique Cabrera ◽  
Sara Olibet ◽  
Dominik Rudolph ◽  
Eckard Wefringhaus ◽  
Radovan Kopecek ◽  
...  

2020 ◽  
Vol 2020 ◽  
pp. 1-5
Author(s):  
Chin-Lung Cheng ◽  
Chi-Chung Liu ◽  
Chih-Chieh Hsu

Photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoO x ) as hole-selective layers (HSLs) were demonstrated. A H2/Ar plasma pretreatment (PPT) was incorporated into a MoO x /p-Si(100) interface, which shows the expected quality in terms of passivation. Moreover, the charge trapping characteristics of the MoO x /p-Si(100) interface were presented. The PPT parameters, including power, treated time, flow ratio of H2/Ar, and temperature, were investigated. The experimental results indicate that the Si-H bond with a relatively high intensity was demonstrated for the H2/Ar PPT. The achievement of a conversion efficiency (CE) improvement of more than 1.2% absolute from 18.3% to 19.5% for SPSSCs with H2/Ar PPT was explored. The promoted mechanism was attributed to the reduction of the interface trap density caused by the large number of Si-H bonds at the silicon substrate and MoO x interface.


2013 ◽  
Vol 117 ◽  
pp. 412-420 ◽  
Author(s):  
Prabir Kanti Basu ◽  
Ziv Hameiri ◽  
Debajyoti Sarangi ◽  
Jessen Cunnusamy ◽  
Edwin Carmona ◽  
...  

2013 ◽  
Vol 106 ◽  
pp. 333-341 ◽  
Author(s):  
Bo-Mook Chung ◽  
Sung-Bin Cho ◽  
Jung-Woo Chun ◽  
Young-Sik Kim ◽  
Kuninori Okamoto ◽  
...  

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