Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
2017 ◽
Vol 111
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pp. 1050-1057
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2000 ◽
Vol 28
(5)
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pp. 1620-1623
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2009 ◽
Vol 115
(6)
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pp. 964-966
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2011 ◽
Vol 23
(11)
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pp. 3127-3130
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2011 ◽
Vol 23
(6)
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pp. 1579-1582
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Keyword(s):