Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

2017 ◽  
Vol 111 ◽  
pp. 1050-1057 ◽  
Author(s):  
P. Murugapandiyan ◽  
S. Ravimaran ◽  
J. William ◽  
K. Meenakshi Sundaram
2020 ◽  
Vol 5 (2) ◽  
pp. 192-198 ◽  
Author(s):  
P. Murugapandiyan ◽  
A. Mohanbabu ◽  
V. Rajya Lakshmi ◽  
V.N. Ramakrishnan ◽  
Arathy Varghese ◽  
...  

Author(s):  
Sawyer D. Campbell ◽  
Galestan Mackertich-Sengerdy ◽  
J. Daniel Binion ◽  
Ryan J. Chaky ◽  
Ronald P. Jenkins ◽  
...  

2009 ◽  
Vol 115 (6) ◽  
pp. 964-966 ◽  
Author(s):  
R. Bischoff ◽  
R. Charon ◽  
J.P. Duperoux ◽  
B. Martin ◽  
S. Pinguet

2011 ◽  
Vol 23 (11) ◽  
pp. 3127-3130
Author(s):  
张强 Zhang Qiang ◽  
袁成卫 Yuan Chengwei ◽  
刘列 Liu Lie

2011 ◽  
Vol 23 (6) ◽  
pp. 1579-1582 ◽  
Author(s):  
张强 Zhang Qiang ◽  
袁成卫 Yuan Chengwei ◽  
刘列 Liu Lie

Sign in / Sign up

Export Citation Format

Share Document