Near-infrared nonlinear optical properties of single-wall carbon nanotubes embedded in polymer film

2004 ◽  
Vol 464-465 ◽  
pp. 368-372 ◽  
Author(s):  
Aleksey G. Rozhin ◽  
Youichi Sakakibara ◽  
Madoka Tokumoto ◽  
Hiromichi Kataura ◽  
Yohji Achiba
2010 ◽  
Vol 09 (05) ◽  
pp. 531-536
Author(s):  
MOJTABA YAGHOBI

Considering the exciton effect, the polarizability and second polarizability spectra of semiconducting single-wall carbon nanotubes (S-SWCNTs) have been calculated by PPP (Pariser, Parr, and Pople) approximation and the single-excitation configuration interaction (single-CI) method and sum-over-state method. We have studied the nonlinear optical (NLO) properties of the S-SWCNTs with different lengths and diameters. The highest and first peak positions, bandgap, and the spectra shape of the polarizability and second hyperpolarizability change as N (the number of atoms) increases. Also, the peak values of γzzzz are very bigger than that for γxxxx. Our results indicate that the nonlinear optical properties of fullerenes are similar to S-SWCNTs.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.


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